BSC076N04NDATMA1 vs ISC045N03L5SATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and ISC045N03L5SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveInfineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N04NDATMA1 | ISC045N03L5SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| Configuration | Dual N-Channel (independent MOSFETs) | β |
| Drain-Source Voltage (VDS) max | 40 V | β |
| Continuous Drain Current (ID) | 20 A (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | β |
| On-Resistance RDS(on) max | 7.6 mOhm | β |
| Power Dissipation (Ta) | 2.3 W | β |
| Power Dissipation (Tc) | 65 W | β |
| Technology | Trench MOSFET (OptiMOS 3) | OptiMOS 5 / Trench |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | β |
| FET Type | 2x N-Channel MOSFET array | β |
| Part Number | β | ISC045N03L5SATMA1 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 18 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 63 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 4.5 mΞ© |
| Gate-Source Threshold Voltage (VGS(th)) | β | 2 V @ ID=250 Β΅A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Total Gate Charge (Qg) | β | 13 nC @ VGS=10 V |
| Input Capacitance (Ciss) | β | 870 pF @ VDS=15 V |
| Power Dissipation (PD) at TA=25Β°C | β | 2.5 W |
| Power Dissipation (PD) at TC=25Β°C | β | 30 W |
| Package | β | SuperSO8 5x6 (PG-TDSON-8-6) |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| RoHS Status | β | Compliant |