IRF1407PBF vs IRF1018EPBF Comparison
Detailed side-by-side comparison of IRF1407PBF by Infineon and IRF1018EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF1407PBF | IRF1018EPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $0.38 |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (stripe-planar MOSFET) | HEXFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 75 V | β |
| Continuous Drain Current (ID) at TC=25C | 130 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Power Dissipation (PD) at TC=25C | 330 W | β |
| On-Resistance RDS(on) at VGS=10V | 7.8 mOhm (typical) | β |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS threshold typical/min/max] | β |
| Gate Charge (Qg) | 160 nC (typical) | β |
| Maximum Junction Temperature | 175 C | β |
| Operating Temperature Range | -55 C to +175 C | -55 C to +175 C (Tj) |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole, 3-lead) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Lead-free, RoHS compliant (PBF suffix) | β |
| Avalanche Rating | Repetitive avalanche rated | β |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) at Tc=25C | β | 79 A |
| Rds(on) max at Vgs=10V | β | 8.4 mOhm |
| Total Gate Charge (Qg) | β | 46 nC |
| Gate Drive Voltage (Vgs) | β | 10 V (optimized; +/-20 V max) |
| Power Dissipation (Pd) at Tc=25C | β | 110 W |
| Qualification | β | JEDEC (Industrial market) |
| RoHS Status | β | Compliant |
| Lead-Free (PBF suffix) | β | Yes |
| Pin Count | β | 3 (Gate, Drain, Source) |