IS43TR16256AL-125KBLI-TR vs NT5CC256M16DP-DI Comparison
Detailed side-by-side comparison of IS43TR16256AL-125KBLI-TR by ISSI, Integrated Silicon Solution Inc and NT5CC256M16DP-DI by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBLI-TR - 4Gbit DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBLI-TR β ActiveNanya Technology
NT5CC256M16DP-DI
NT5CC256M16DP-DI - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CC256M16DP-DI β ActiveSpecification Comparison
| Parameter | IS43TR16256AL-125KBLI-TR | NT5CC256M16DP-DI |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $8.25 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | β |
| Data Bus Width | 16 bit | β |
| Clock Frequency | 800 MHz | β |
| Data Rate | 1600 Mbps | 1600 Mbps/pin (800MHz) |
| CAS Latency | 11 | 11, 12, 13 (programmable) |
| Supply Voltage (VDD/VDDQ) | 1.35V Β± 0.1V, -0.067V | β |
| Backward Compatible Voltage | 1.5V | β |
| Row Cycle Time (tRC) | 20 ns | β |
| Row Active Time (tRAS) | 20 ns | β |
| Operating Temperature Range | -40Β°C to +95Β°C (TC) | -40Β°C to +95Β°C (industrial) |
| Package | 96-TWBGA (9x13 mm) | VFBGA-96 |
| Mounting Type | Surface Mount | β |
| Burst Length | 8 | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | Yes | β |
| Refresh Modes | Auto-refresh, Self-refresh | β |
| RoHS Status | Compliant | β |
| Density | β | 4Gb |
| Organization | β | 256M x 16 |
| Supply Voltage | β | 1.35V |
| Number of Banks | β | 8 |
| Interface | β | Differential clock (CK, CK#) |
| Refresh | β | Auto-refresh and self-refresh |
| On-Die Termination | β | Yes (ODT) |
| RoHS | β | Compliant |
| Lead-Free | β | Yes |