ISC045N03L5SATMA1 vs ISZ028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC045N03L5SATMA1 by Infineon and ISZ028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC045N03L5SATMA1 - 30V 4.5mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
ISC045N03L5SATMA1 β ActiveInfineon
ISZ028N03LF2SATMA1 - 30V 128A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC045N03L5SATMA1 | ISZ028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.51 | $0.49 |
| Manufacturer | Infineon Technologies | β |
| Part Number | ISC045N03L5SATMA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOS 5 / Trench | StrongIRFET 2 (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 18 A | β |
| Continuous Drain Current (ID) at TC=25Β°C | 63 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 2 V @ ID=250 Β΅A | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Total Gate Charge (Qg) | 13 nC @ VGS=10 V | [DATA_NEEDED: Qg] |
| Input Capacitance (Ciss) | 870 pF @ VDS=15 V | β |
| Power Dissipation (PD) at TA=25Β°C | 2.5 W | β |
| Power Dissipation (PD) at TC=25Β°C | 30 W | β |
| Package | SuperSO8 5x6 (PG-TDSON-8-6) | PG-TSDSON-8 FL (FL = flat lead) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +150 Β°C | -55C to +175C (junction, typical) |
| RoHS Status | Compliant | Compliant |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc | β | 128 A |
| Continuous Drain Current (ID) at Ta | β | 22 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V |
| On-Resistance (RDS(on)) max | β | 2.8 mΞ© |
| Power Dissipation (Tc) | β | 83 W |
| Power Dissipation (Ta) | β | 3 W |
| Gate Drive Voltage (recommended) | β | 10 V (logic level at 4.5 V) |
| MSL Level | β | 1 |
| Avalanche Energy Rated | β | Yes (single-pulse) |