K4A8G085WB-BCRC vs MT40A512M16JY-07EAIT:B Comparison
Detailed side-by-side comparison of K4A8G085WB-BCRC by Samsung Electronics and MT40A512M16JY-07EAIT:B by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G085WB-BCRC
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC β ActiveMicron Technology
MT40A512M16JY-07EAIT:B
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B β ActiveSpecification Comparison
| Parameter | K4A8G085WB-BCRC | MT40A512M16JY-07EAIT:B |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.80 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | β |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 2400 Mbps | 2666 MT/s |
| Supply Voltage | 1.2 V | β |
| Operating Temperature | 0Β°C to 85Β°C | β |
| Package | 78-ball FBGA | 96-FBGA (8x14) |
| Number of Terminals | 78 | β |
| Refresh Cycles | 8192 | β |
| Access Time | 0.175 ns | β |
| Technology | CMOS | β |
| Burst Length | 8 and 4 | β |
| On-Die Termination | Yes | β |
| Auto-Refresh | Yes | β |
| Self-Refresh | Yes | β |
| RoHS | Compliant | Compliant |
| Memory Size | β | 8 Gbit |
| Clock Frequency | β | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | β | 1.2V Β±60mV |
| VPP Voltage | β | 2.5V, -125mV, +250mV |
| Interface | β | Parallel |
| Operating Temperature Range | β | -40Β°C to +105Β°C (AIT grade) |
| Refresh Time | β | 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C to 105Β°C |
| I/O Type | β | 1.2V pseudo open-drain |
| VREFDQ | β | On-die, internal, adjustable |
| AEC-Q100 | β | Qualified (AIT suffix) |