MT40A512M16LY-062E vs NT5AD512M16A4-HR Comparison
Detailed side-by-side comparison of MT40A512M16LY-062E by Micron Technology and NT5AD512M16A4-HR by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT40A512M16LY-062E
MT40A512M16LY-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron
MT40A512M16LY-062E β ActiveNanya Technology
NT5AD512M16A4-HR
NT5AD512M16A4-HR - 8Gb DDR4 SDRAM 512Mx16 | Nanya
NT5AD512M16A4-HR β ActiveSpecification Comparison
| Parameter | MT40A512M16LY-062E | NT5AD512M16A4-HR |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.65 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps (PC4-25600) |
| Clock Frequency | 1.6 GHz | β |
| Access Time | 19 ns | β |
| Supply Voltage VDD/VDDQ | 1.2 V +/- 60 mV | β |
| Supply Voltage VPP | 2.5 V (-125 mV, +250 mV) | β |
| Bank Architecture | 16 banks in 2 groups of 4 (x16) | β |
| Refresh | 8192-cycle; 64 ms at -40C to +85C, 32 ms >85C to +95C, 16 ms >95C | β |
| I/O Interface | 1.2 V pseudo open-drain | β |
| Features | Auto self-refresh, write leveling, dynamic ODT, CRC, data mask, auto precharge, async reset, ZQ calibration, on-die adjustable VREFDQ | β |
| Operating Temperature | -40C to +95C (IT grade) | 0Β°C to +95Β°C |
| Package | 96-ball FBGA (7.5 x 13.5 mm) | TFBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | β |
| Density | β | 8 Gb |
| Supply Voltage | β | 1.2 V |
| Auto Self-Refresh | β | Yes |
| Built-in Temperature Sensor | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| CRC Function | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| ZQ Calibration | β | Yes |