MT41K256M16RE-125:D vs NT5CB256M16CP-EK Comparison
Detailed side-by-side comparison of MT41K256M16RE-125:D by Micron Technology and NT5CB256M16CP-EK by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-125:D
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D β ActiveNanya Technology
NT5CB256M16CP-EK
NT5CB256M16CP-EK - 4Gb DDR3L SDRAM 256Mx16 | Nanya
NT5CB256M16CP-EK β ActiveSpecification Comparison
| Parameter | MT41K256M16RE-125:D | NT5CB256M16CP-EK |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.19 | $5.90 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35V (1.425V to 1.575V) |
| Data Rate | 1600 MT/s | DDR3-2133 (CL14) |
| CAS Latency | 11 | β |
| Package | FBGA-96 (9x14 mm) | 96-ball TFBGA |
| Operating Temperature | 0C to +95C (TC) | Commercial: 0C to +95C; Industrial: -40C to +95C; Automotive: -40C to +95C |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Burst Length | 8, 4 | β |
| On-Die Termination | Yes | β |
| Auto-Refresh | Yes | β |
| Self-Refresh | Yes | β |
| Ball Pitch | 0.8 mm | β |
| CAS Latency (CL) | β | 9, 10, 11, 12, 13, 14 |
| WRITE Latency (CWL) | β | 5, 6, 7, 8, 9 |
| Posted CAS Additive Latency | β | Programmable |
| Internal Banks | β | 8 (BA0-BA2) |
| REACH | β | Compliant |
| Mounting Type | β | Surface Mount |