NT5AD512M16C4-JRI vs K4A8G165WB-BIWE Comparison
Detailed side-by-side comparison of NT5AD512M16C4-JRI by Nanya Technology and K4A8G165WB-BIWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16C4-JRI
NT5AD512M16C4-JRI - 8Gb DDR4-3200 SDRAM | Nanya Technology
NT5AD512M16C4-JRI β ActiveSamsung Electronics
K4A8G165WB-BIWE
K4A8G165WB-BIWE - 8Gb DDR4 SDRAM 3200Mbps | Samsung
K4A8G165WB-BIWE β ActiveSpecification Comparison
| Parameter | NT5AD512M16C4-JRI | K4A8G165WB-BIWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $75.58 | $14.22 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Density | 8 Gbit | β |
| Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps (DDR4-3200) | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature Range | -40Β°C to +95Β°C | β |
| Package | TFBGA-96 | 96-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | Compliant |
| Density | β | 8 Gb |
| Operating Temperature | β | -40Β°C to +95Β°C |
| Interface | β | Parallel |
| Burst Length | β | 8, 16 |
| CAS Latency | β | [DATA_NEEDED: CAS Latency] |
| Refresh | β | Auto-refresh, Self-refresh |
| On-Die Termination | β | Yes |
| Number of Pins | β | 96 |