RS512M16Z2DD-62DT vs MT40A512M16JY-075E Comparison

Detailed side-by-side comparison of RS512M16Z2DD-62DT by Rayson and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Rayson
RS512M16Z2DD-62DT

RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson

RS512M16Z2DD-62DT βœ“ Active
Micron Technology
MT40A512M16JY-075E

MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16JY-075E βœ“ Active

Specification Comparison

Parameter RS512M16Z2DD-62DT MT40A512M16JY-075E
Brand Rayson Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $30.80 $30.50
Memory Type DDR4 SDRAM DDR4 SDRAM
Organization 512M x 16 512M x 16
Total Density 8 Gbit β€”
Data Rate 3200 Mb/s/pin 2666 MT/s
CAS Latency 22 β€”
tRCD (min) 13.75 ns β€”
tRP (min) 13.75 ns β€”
tRAS (min) 32 ns β€”
tRC (min) 45.75 ns β€”
tCK (min) 0.625 ns β€”
Operating Temperature Range 0Β°C to +95Β°C 0Β°C to +95Β°C (TC)
Supply Voltage (VDD) 1.14V to 1.26V β€”
Supply Voltage (VDDQ) 2.375V to 2.75V β€”
Clock Frequency 1.6 GHz 1.33 GHz
Package FBGA-96 (7.5x13 mm) 96-FBGA (8x14)
RoHS Status Compliant Compliant
Memory Size β€” 8 Gbit
Supply Voltage (VDD/VDDQ) β€” 1.14V to 1.26V
VPP Voltage β€” 2.5V (-125mV, +250mV)
Interface β€” Parallel
Mounting Type β€” Surface Mount
Refresh Time β€” 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C
Features β€” Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC
I/O Type β€” 1.2V pseudo open-drain

Datasheets & Resources

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