RS512M16Z2DD-62DT vs MT40A512M16TB-062E Comparison

Detailed side-by-side comparison of RS512M16Z2DD-62DT by Rayson and MT40A512M16TB-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Rayson
RS512M16Z2DD-62DT

RS512M16Z2DD-62DT - 8Gbit DDR4 SDRAM 512Mx16 | Rayson

RS512M16Z2DD-62DT βœ“ Active
Micron Technology
MT40A512M16TB-062E

MT40A512M16TB-062E - 8Gb DDR4 SDRAM 512Mx16 | Micron

MT40A512M16TB-062E βœ“ Active

Specification Comparison

Parameter RS512M16Z2DD-62DT MT40A512M16TB-062E
Brand Rayson Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $30.80 $60.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Organization 512M x 16 512M x 16
Total Density 8 Gbit β€”
Data Rate 3200 Mb/s/pin 1600 MHz (DDR4-3200)
CAS Latency 22 β€”
tRCD (min) 13.75 ns β€”
tRP (min) 13.75 ns β€”
tRAS (min) 32 ns β€”
tRC (min) 45.75 ns β€”
tCK (min) 0.625 ns β€”
Operating Temperature Range 0Β°C to +95Β°C 0Β°C to +95Β°C (standard), -40Β°C to +95Β°C (IT)
Supply Voltage (VDD) 1.14V to 1.26V β€”
Supply Voltage (VDDQ) 2.375V to 2.75V β€”
Clock Frequency 1.6 GHz β€”
Package FBGA-96 (7.5x13 mm) 96-FBGA (7.5x13 mm)
RoHS Status Compliant Compliant
Memory Size β€” 8 Gbit
Supply Voltage - VDD/VDDQ β€” 1.2V Β±60mV
Supply Voltage - VPP β€” 2.5V, -125mV, +250mV
tRCD β€” 19 ns
Refresh Time β€” 8192 cycles; 64ms at -40Β°C to 85Β°C, 32ms at >85Β°C to 95Β°C, 16ms at >95Β°C
Mounting Type β€” Surface Mount
Interface β€” Parallel
Features β€” Auto self-refresh, auto precharge, write leveling, CRC, dynamic on-chip termination, ZQ calibration
REACH Status β€” Compliant

Datasheets & Resources

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