2ED2103S06FXUMA1 vs 2EDN7533RXTMA1 Comparison

Detailed side-by-side comparison of 2ED2103S06FXUMA1 by Infineon and 2EDN7533RXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2ED2103S06FXUMA1 2EDN7533RXTMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Function Half-Bridge Gate Driver Dual-channel low-side gate driver
Configuration Non-Inverting —
Technology High-Voltage Level Shift (SOI) —
Number of Drivers 2 (high-side + low-side) —
Driven Device Type IGBT, N-Channel MOSFET —
High-Side Offset Voltage (Max) 650 V —
Bootstrap Voltage (Max) 675 V —
Supply Voltage (VCC) 10 V to 20 V —
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Bootstrap Diode Integrated —
Logic Input Compatibility 3.3 V / 5 V —
Under-Voltage Lockout (UVLO) Yes (VCC and VBS) —
Package PG-DSO-8-69 (DSO-8 with exposed pad) PG-TSSOP-8 (HTSSOP) with exposed pad
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40C to +125C —
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status Compliant Compliant
Number of Channels — 2
Input Polarity — Inverting
Peak Source/Sink Output Current — 5 A
Output Resistance (Pull-up, typ.) — 0.5 ohm
Output Resistance (Pull-down, typ.) — 0.3 ohm
Propagation Delay (typ.) — 19 ns
Channel-to-Channel Delay Matching — 1.3 ns (typ.)
Rise/Fall Time — 1.7 ns / 1.5 ns (typ., 1 nF load)
Input Logic Compatibility — LV-TTL
Input Voltage Tolerance — -12 V to +22 V
Supply Voltage VDD (recommended) — 4.5 V to 20 V
Supply Voltage VDD (absolute max) — 25 V
Under-Voltage Lockout — Yes (per channel)
Operating Junction Temperature — -40 C to +150 C

Datasheets & Resources

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