BAT42-TAP vs BAT42 Comparison
Detailed side-by-side comparison of BAT42-TAP by Vishay Intertechnology and BAT42 by STMicroelectronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Vishay Intertechnology
BAT42-TAP
BAT42-TAP - 30V 200mA Schottky Diode DO-35 | Vishay
BAT42-TAP β ActiveSTMicroelectronics
BAT42
BAT42 - 30V 200mA Schottky Diode DO-35 | STMicroelectronics
BAT42 β ActiveSpecification Comparison
| Parameter | BAT42-TAP | BAT42 |
|---|---|---|
| Brand | Vishay Intertechnology | STMicroelectronics |
| Category | Diodes | Diodes |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.04 | $0.02 |
| Diode Type | Small-Signal Schottky Barrier | Small Signal Schottky Barrier |
| Repetitive Peak Reverse Voltage (VRRM) | 30 V | β |
| Average Forward Current (IF(AV)) | 200 mA | 200 mA |
| Non-Repetitive Surge Current (IFSM) | 4.0 A | β |
| Forward Voltage (VF) | [DATA_NEEDED: forward voltage at rated current] | [DATA_NEEDED: forward voltage at rated current] |
| Reverse Recovery | Fast switching (Schottky, no stored charge) | β |
| Junction Capacitance | [DATA_NEEDED: diode capacitance] | β |
| Reverse Leakage Current (IR) | [DATA_NEEDED: reverse leakage at rated VR] | [DATA_NEEDED: reverse leakage current] |
| Package | DO-204AH (DO-35) glass axial | DO-35 axial through-hole |
| Mounting Type | Through Hole | Through Hole |
| Termination Style | Axial Leads | β |
| Packaging Suffix | -TAP (Ammo tape packing) | β |
| Configuration | Single Diode | Single diode |
| Protection Feature | PN junction guard ring against ESD / excessive voltage | β |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | β |
| AEC-Q101 Option | Qualified version available on request | β |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS compliance status] |
| Mounting Technology | Wave solder / hand solder | β |
| Repetitive Reverse Voltage (VRRM) | β | 30 V |
| Non-Repetitive Peak Forward Surge Current (IFSM) | β | 4 A |
| Junction Operating Temperature | β | up to 125 C |
| Switching Speed | β | Fast (Schottky, no reverse recovery) |
| Technology | β | Metal-to-silicon Schottky junction with guard ring ESD protection |
| Application Class | β | General purpose fast switching |
| Manufacturer | β | STMicroelectronics |