BSC019N04LSTATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of BSC019N04LSTATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC019N04LSTATMA1

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 βœ“ Active

Specification Comparison

Parameter BSC019N04LSTATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.21 $0.49
Technology OptiMOS 5 (N-channel trench MOSFET) N-Channel MOSFET (OptiMOS)
Drain-Source Voltage (VDS) 40 V 60 V
Continuous Drain Current (ID, Tc=25C) 161 A β€”
Continuous Drain Current (ID, Ta=25C) 28 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed ID limit] β€”
On-Resistance RDS(on) max @ VGS=10V 1.9 mOhm β€”
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] β€”
Gate Threshold Voltage VGS(th) typ 1.7 V β€”
Total Gate Charge Qg typ 85 nC β€”
Power Dissipation PD (Tc=25C) 94 W β€”
Operating Temperature Range -55 C to +150 C β€”
Package TDSON-8 (SuperSO8) 5x6 mm PG-TO252-3-11 (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) β€”
RoHS Status Compliant Compliant
Lead-Free / Halogen-Free Yes / Yes [DATA_NEEDED]
Avalanche Rated Yes β€”
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101

Datasheets & Resources

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