IPD50N06S409ATMA2 - 60V 50A 9mΩ OptiMOS N-Ch MOSFET | Infineon
MPN: IPD50N06S409ATMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.74 | $370.00 |
| 1,000 | $0.61 | $610.00 |
| 3,000 | $0.49 | $1,470.00 |
IPD50N06S409ATMA2 Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses the gate electric field to modulate conduction between source and drain. N-channel MOSFETs like this Infineon OptiMOS device offer lower on-resistance per unit silicon area than equivalent P-channel devices because electrons have higher mobility than holes. Within the broader taxonomy, a discrete MOSFET sits under discrete semiconductors → transistors → power transistors → power MOSFETs → N-channel power MOSFETs. The OptiMOS family from Infineon targets automotive, industrial, and computing power conversion with a strong focus on switching loss reduction.
Key features include a maximum drain-source on-resistance of 9 mΩ at VGS=10 V, low gate charge Qg for fast switching, integrated body diode for inductive load commutation, and an operating junction temperature range from -55 °C to +175 °C. The AEC-Q101 automotive qualification supports under-hood and chassis deployment where extended thermal and vibration stress are present. The PG-TO252-3-11 (DPAK) surface-mount package provides a low thermal resistance path through the tab to the PCB copper pour.
In typical applications, the IPD50N06S409ATMA2 is used as the high-side or low-side switch in solenoid drivers, valve controllers, LED lighting drivers, motor pre-drivers, and DC-DC converter primary-side switches. The 60 V rating provides ample headroom above 24 V automotive transients while keeping R<sub>DS(on)</sub> low. A trade-off note: at high switching frequencies the gate charge losses can dominate, so a driver with sufficient peak current (typically 1 A or more) is recommended to keep rise/fall times short and limit ringing on the gate-source loop.
Drop-in alternatives for IPD50N06S409ATMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IPD50N06S409ATMA2 (same form factor and footprint) — differing in Package, Operating Temperature Range, Technology, Drain-Source Voltage (VDS), MSL Level.
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IPD50N06S409ATMA2 Maximum Ratings & Electrical Characteristics
| Technology | N-Channel MOSFET (OptiMOS) |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tc | 50 A |
| On-Resistance R<sub>DS(on)</sub> max at VGS=10V | 9 mΩ |
| Power Dissipation (Pd) at Tc | 71 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TO252-3-11 (DPAK) |
| Pin Count | 3 (2 + Tab) |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 |
| RoHS Status | Compliant |
IPD50N06S409ATMA2 Pin Configuration
| Pin 1 | Gate — Gate drive input; controls drain-source conduction |
| Pin 2 | Source — Source terminal; common reference for gate drive and load return |
| Pin 3 | Drain (Tab) — Drain terminal and thermal pad; must be soldered to PCB copper pour for heatsinking |
Safe Operating Area (DC)
Typical Applications
IPD50N06S409ATMA2 is suitable for 6 applications: Automotive Solenoid Driver (12V / 24V), Automotive LED Lighting Driver, Motor Pre-Driver / H-Bridge Switch, DC-DC Converter Primary Switch, Battery Management Protection Switch, Industrial Valve and Relay Replacement.
Automotive Solenoid Driver (12V / 24V)
The IPD50N06S409ATMA2 is well suited as the low-side switch for automotive solenoid drivers including transmission shift solenoids, EGR valves, and purge valves operating on 12 V or 24 V rails. Its 9 mΩ R<sub>DS(on)</sub> at VGS=10 V minimizes conduction loss during PWM holding current, while the 60 V VDS rating provides headroom against 24 V load-dump transients that can momentarily reach ~36 V. The DPAK tab solders to the PCB copper pour, providing thermal dissipation for the 71 W rated power. AEC-Q101 qualification supports under-hood deployment where ambient temperatures reach 125 °C. Designers typically operate at 1-5 kHz PWM with a gate driver sourcing 1 A peak to ensure fast switching.
Recommended
Automotive LED Lighting Driver
In automotive front-light and rear-light LED drivers, the IPD50N06S409ATMA2 functions as the high-side or low-side PWM switch for constant-current regulation of LED strings. Its 50 A continuous drain rating supports multi-LED parallel configurations while the 9 mΩ on-resistance keeps conduction losses below 5 W at typical 20 A drive currents, eliminating the need for forced-air cooling in lamp housings. The AEC-Q101 qualification ensures compliance with automotive headlamp reliability requirements over 10-year service life. Low gate charge (Qg typical not published, but OptiMOS family known for low Qg) supports PWM dimming above 1 kHz without excessive driver losses.
Recommended
Motor Pre-Driver / H-Bridge Switch
The IPD50N06S409ATMA2 serves as a half-bridge switch in automotive brushed DC motor pre-drivers for window lift, seat adjustment, and wiper systems. Two IPD50N06S409ATMA2 devices form an H-bridge delivering up to 50 A peak per leg with 9 mΩ conduction loss per switch, supporting motor stall currents up to 30 A without thermal shutdown. The 60 V VDS rating provides robust avalanche capability during motor commutator switching transients. The DPAK package enables compact PCB layouts where multiple parallel bridges (for dual-motor systems) must fit on a single ECU board.
Recommended
DC-DC Converter Primary Switch
In 12 V to 24 V buck or boost DC-DC converters for automotive point-of-load applications, the IPD50N06S409ATMA2 operates as the primary-side switch at switching frequencies of 50-200 kHz. Its 9 mΩ R<sub>DS(on)</sub> and OptiMOS-family low gate charge minimize switching losses, achieving efficiencies above 95% in 12 V-to-5 V buck topologies at 10-20 A loads. The 60 V rating accommodates 24 V input rails with standard automotive transient protection. The DPAK package provides sufficient thermal dissipation for continuous 5-10 A operation with a 1 in² copper pour, eliminating the need for external heatsinks in space-constrained ECU modules.
Recommended
Battery Management Protection Switch
The IPD50N06S409ATMA2 functions as the reverse-battery and over-current protection FET in 12 V automotive battery management systems. Its 50 A continuous rating and 60 V VDS rating handle jump-start and load-dump transients on the battery rail while its 9 mΩ R<sub>DS(on)</sub> keeps protection path loss under 250 mW at 5 A standby current. The DPAK package mounts directly to the PCB copper pour, enabling compact BMS modules for start-stop micro-hybrid vehicles. AEC-Q101 qualification ensures reliability over 15-year automotive service life.
Recommended
Industrial Valve and Relay Replacement
In industrial 24 V solenoid valve and electromechanical relay replacement designs, the IPD50N06S409ATMA2 provides a solid-state switching alternative with 50x longer service life than mechanical relays. Its 60 V VDS rating covers 24 V industrial rails with 150% over-voltage transients, and the 9 mΩ R<sub>DS(on)</sub> ensures low-power dissipation in continuous-duty applications like process control valve arrays. The DPAK package supports PCB mounting that directly replaces legacy relay footprints with proper thermal design, and AEC-Q101 qualification provides additional robustness margin for industrial environments with vibration and temperature cycling.
Recommended
Recommended Products Summary
Engineering reference data for IPD50N06S409ATMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPB35N10S3L26ATMA1 | IPB081N06L3GATMA1 | IPD50N04S408ATMA1 | IPB090N06N3G | NTD5867N |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TO252-3-11 (DPAK) | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO252-3-11 (DPAK) - same | PG-TO262-3 (D²PAK) - larger | DPAK (TO-252) - same |
| VDS (max) | 60 V | 100 V | 60 V | 40 V | 60 V | 60 V |
| Continuous Drain Current (Tc) | 50 A | 35 A | 50 A | 50 A | 90 A | 50 A |
| R<sub>DS(on)</sub> max @ VGS=10V | 9 mΩ | 35 mΩ | 8.1 mΩ | 8 mΩ | 9 mΩ | 10 mΩ |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology Family | OptiMOS | OptiMOS | OptiMOS | OptiMOS | OptiMOS | onsemi Trench |
Key Differentiators
- Lower on-resistance than voltage-overspecified alternatives (vs IPB35N10S3L26ATMA1)
- Higher voltage margin than 40 V alternatives (vs IPD50N04S408ATMA1)
- Higher continuous current than DPAK-class alternatives (vs IPB081N06L3GATMA1)
- Established automotive second-source via cross-brand equivalents (vs NTD5867N (onsemi))
Design Notes
Estimated: at VGS=10 V, ID=25 A continuous load, conduction loss P_cond = 9 mΩ × 25² ≈ 5.6 W. The DPAK package with a 1 oz copper pour of 1 in² gives theta_JA ≈ 50 °C/W, leading to a junction temperature rise of 5.6 × 50 = 280 °C above ambient - this exceeds the 175 °C maximum. To stay within safe operating area at 25 A continuous, use at least 2 in² of 1 oz copper or reduce switching frequency to limit total dissipation. Always verify thermal performance with a thermocouple measurement on the tab in worst-case operating conditions.
The DPAK tab serves as both the drain electrical connection and the primary thermal path. Solder the tab to a copper pour of at least 1 in² (2 oz copper preferred for best thermal performance). Use thermal vias (typically 9-12 vias of 0.3 mm diameter) under the tab to connect top copper to inner plane layers for additional heat spreading. Keep the gate-trace short (under 25 mm) and route it away from the switching-node (drain) trace to minimize gate-to-drain coupling noise. Add a 10 kΩ gate-to-source pull-down resistor to prevent false turn-on from Miller coupling during switching transients.
Do not exceed VGS ratings: VGS(max) is typically ±20 V for this part. Driving the gate above 20 V will destroy the gate oxide. Use a gate driver IC with proper VGS clamping, or add a Zener diode (e.g., 16 V) from gate to source for protection if a discrete gate drive circuit is used. Also note that the IPD50N06S409ATMA2 has a body diode with reverse recovery characteristics - if used in a half-bridge with hard-switching, parallel Schottky diodes may be needed to reduce dead-time losses. For 24 V systems with frequent load-dump events, verify the avalanche rating is not exceeded by adding a TVS diode across the drain-source.
When switching at frequencies above 100 kHz or with rise times below 50 ns, gate-to-drain Miller coupling can cause gate voltage spikes that turn on the MOSFET partially during off-state. Use a gate-source resistor of 10 kΩ to keep the gate firmly held low during switching, and add a small ferrite bead or gate resistor (10-100 Ω) in series with the gate to dampen ringing. Keep the gate-drive loop area minimal by placing the gate driver IC close to the MOSFET gate pin. For high-current switching, use a kelvin source connection to separate the gate-drive return from the power-source return path.
Compliance Information
AEC-Q101 (automotive MOSFET grade) qualified per distributor listings and Infineon product page. RoHS compliant per distributor listings.
