BSC076N04NDATMA1 vs IPD50N06S409ATMA2 Comparison

Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and IPD50N06S409ATMA2 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC076N04NDATMA1

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC076N04NDATMA1 IPD50N06S409ATMA2
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.49
Manufacturer Infineon Technologies β€”
Series OptiMOS 3 β€”
Configuration Dual N-Channel (independent MOSFETs) β€”
Drain-Source Voltage (VDS) max 40 V β€”
Continuous Drain Current (ID) 20 A (Tc) β€”
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max 7.6 mOhm β€”
Power Dissipation (Ta) 2.3 W β€”
Power Dissipation (Tc) 65 W β€”
Technology Trench MOSFET (OptiMOS 3) N-Channel MOSFET (OptiMOS)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) β€”
Operating Junction Temperature -55 C to +175 C -55 Β°C to +175 Β°C
Package / Case PG-TDSON-8-4 (SuperSO8, 5x6 mm) β€”
Mounting Type Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) β€”
FET Type 2x N-Channel MOSFET array β€”
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID) at Tc β€” 50 A
On-Resistance R<sub>DS(on)</sub> max at VGS=10V β€” 9 mΞ©
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Total Gate Charge (Qg) β€” [DATA_NEEDED: Qg typical]
Power Dissipation (Pd) at Tc β€” 71 W
Package β€” PG-TO252-3-11 (DPAK)
Pin Count β€” 3 (2 + Tab)
Automotive Qualification β€” AEC-Q101
RoHS Status β€” Compliant
Lead-Free / Halogen-Free β€” [DATA_NEEDED]

Datasheets & Resources

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