BSC0921NDIATMA1 vs IRF7854TRPBF Comparison

Detailed side-by-side comparison of BSC0921NDIATMA1 by Infineon and IRF7854TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC0921NDIATMA1

BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon

BSC0921NDIATMA1 βœ“ Active

Specification Comparison

Parameter BSC0921NDIATMA1 IRF7854TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $0.48
Manufacturer Infineon Technologies β€”
Technology OptiMOS 25V (N-channel) HEXFET (planar N-channel)
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (VDS) 30 V 80 V
Continuous Drain Current (ID) 17 A (per channel) β€”
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) β€”
Total Power Dissipation (PD) 1 W β€”
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] β€”
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] β€”
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) β€”
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) β€”
Package PG-TISON-8 (8-pin, exposed pad) SO-8
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) β€”
RoHS Status Compliant β€”
MSL Level 1 (per Infineon OptiMOS family) β€”
Primary Application Synchronous buck converters, VRMs, POL regulators β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at Ta=25Β°C β€” 10 A
Power Dissipation (PD) at Ta=25Β°C β€” 2.5 W
On-Resistance RDS(on) max at VGS=10V β€” 13.4 mΞ©
Gate-Source Threshold Voltage VGS(th) max β€” 4.9 V
Total Gate Charge Qg β€” 27 nC
Operating Temperature Range β€” -55Β°C to +150Β°C (TJ)
Lead-Free / RoHS β€” Yes (PBF suffix, lead-free)
Qualification β€” JEDEC industrial, Normal level
Solder Process β€” Reflow and wave-solderable
Gate Drive Voltage (recommended) β€” 10 V

Datasheets & Resources

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