IRF7854TRPBF - 80V 10A N-Channel HEXFET MOSFET SO-8 | Infineon
MPN: IRF7854TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.04 | $1.04 |
| 10 | $0.95 | $9.50 |
| 100 | $0.78 | $78.00 |
| 500 | $0.62 | $310.00 |
| 1,000 | $0.48 | $480.00 |
IRF7854TRPBF Overview
An N-channel power MOSFET is a voltage-controlled three-terminal transistor used to switch or amplify DC loads. In the semiconductor taxonomy it sits under discrete semiconductors > transistors > MOSFETs > power MOSFETs. HEXFET is Infineon's (formerly International Rectifier) trademarked planar MOSFET technology using a hex-cell gate structure to minimize RDS(on) per unit silicon area. The N-channel variant requires a positive gate-source voltage to turn on and is the dominant polarity for low-voltage switching because electron mobility in silicon is roughly 2-3x higher than hole mobility, yielding lower on-resistance for the same die size.
Key features of the IRF7854TRPBF include VDS = 80 V, ID = 10 A at 25 °C case temperature, RDS(on) = 13.4 mΩ maximum at VGS = 10 V, VGS(th) = 4.9 V maximum, total gate charge (Qg) of 27 nC, and an industry-standard SO-8 footprint. The SO-8 package exposes the die to the PCB through a large drain tab (pin 5-8), enabling reasonable thermal performance without an external heatsink at moderate duty cycles. The device is also wave-solderable, simplifying mixed-technology assembly.
Architecturally, the IRF7854 uses Infineon's mature HEXFET planar stripe-cell process, which trades off slightly higher RDS(on) for exceptional ruggedness, high avalanche energy, and very low gate charge for the voltage class. The result is a robust 80 V part suitable for primary-side switching in telecom bricks, DC-DC converters, and motor drive H-bridges where inductive avalanche events are routine.
Typical applications include primary-side switches in 48 V telecom rectifier modules (within the 48 V ETSI input range), synchronous rectification in isolated DC-DC converters, half-bridge motor drivers, battery protection circuits in 24-36 V packs, and hot-swap controllers for 48 V backplane distribution. The part is also widely used in Class-D audio output stages and e-bike controller boards.
When designing with this part, ensure that VGS is driven to at least 10 V for full RDS(on) performance; logic-level 3.3 V MCUs will not turn the device fully on and will incur excessive conduction loss. For high-side use, a gate-drive bootstrap or isolated supply is required because the source pin swings with the load.
This page synthesizes distributor stock data, cross-reference equivalents, and practical design notes that are not consolidated in the manufacturer datasheet, giving engineers a single source for sourcing and second-source decisions.
Drop-in alternatives for IRF7854TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRF7854TRPBF (same form factor and footprint) — differing in Package, Technology, Configuration, Drain-Source Voltage (VDS), FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7854PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7853TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7815TRPBF
✅ Drop-In✓ In Stock
$0.36 / Unit
View Datasheet →IRF7842TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
BSC0921NDIATMA1
✅ Drop-In✓ In Stock
$0.68 / Unit
View Datasheet →IPI50N10S3L-11
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRF7854TRPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at Ta=25°C | 10 A |
| Power Dissipation (PD) at Ta=25°C | 2.5 W |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V |
| Total Gate Charge Qg | 27 nC |
| Package | SO-8 |
| Mounting Type | Surface Mount |
| Technology | HEXFET (planar N-channel) |
| Operating Temperature Range | -55°C to +150°C (TJ) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) |
| Qualification | JEDEC industrial, Normal level |
| Solder Process | Reflow and wave-solderable |
| Gate Drive Voltage (recommended) | 10 V |
IRF7854TRPBF Pin Configuration
| Pin 1 | Source — Source terminal (S1) |
| Pin 2 | Source — Source terminal (S2, often used as Kelvin source) |
| Pin 3 | Source — Source terminal (S3) |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Drain — Drain terminal (D1, internally bonded to tab) |
| Pin 6 | Drain — Drain terminal (D2, internally bonded to tab) |
| Pin 7 | Drain — Drain terminal (D3, internally bonded to tab) |
| Pin 8 | Drain — Drain terminal (D4, internally bonded to tab) |
Safe Operating Area (DC, TC=25°C)
Typical Applications
IRF7854TRPBF is suitable for 6 applications: 48V Telecom Primary-Side Switch, Synchronous Rectification in Isolated DC-DC Converters, Half-Bridge Motor Driver (24-36V Brushed DC), Battery Protection and Hot-Swap in 24-36V Packs, Class-D Audio Output Stage, Industrial Solenoid and Relay Driver.
48V Telecom Primary-Side Switch
The IRF7854TRPBF fits 48V telecom primary-side switching because its 80V VDS rating provides 32V transient headroom above the 48V ETSI bus maximum, while its 13.4 mΩ RDS(on) at 10V gate drive keeps conduction loss under 1.5W at 10A load. The 27nC total gate charge keeps driver losses low at 100-300 kHz switching frequencies typical of forward and bridge topologies. Per the datasheet, the part is qualified and characterized for ISD ≤ 6A avalanche events which are routine when the converter clamps leakage inductance. Placed on the primary side of an isolated DC-DC brick, the SO-8 footprint keeps the BOM small while the rugged die handles repetitive avalanche from the transformer's leakage energy without derating.
Recommended
Synchronous Rectification in Isolated DC-DC Converters
The IRF7854TRPBF is a strong choice for the secondary-side synchronous rectifier position in 24V-48V isolated DC-DC converters because its 80V rating covers the reflected secondary voltage plus ringing, and the 13.4 mΩ on-resistance competes with Schottky diodes on efficiency. At 10A output the IRF7854 dissipates roughly 1.34W versus a 30V Schottky's typical 4-5W, yielding 3-5% efficiency improvement at full load. The SO-8 package allows it to be placed on the secondary side directly opposite the primary switch, minimizing the high-current loop. Designers should drive the gate synchronously with the secondary winding voltage and add a small dead-time circuit to prevent shoot-through with the primary-side clamp.
Recommended
Half-Bridge Motor Driver (24-36V Brushed DC)
The IRF7854TRPBF is well-suited for the low-side and high-side switches in 24V-36V brushed DC motor half-bridges driving e-bike controllers, robotic actuators, and power tools. The 80V breakdown easily tolerates the back-EMF of a 36V motor during hard commutation, and the 10A continuous current rating covers motors up to approximately 300W mechanical output. Two IRF7854s in a half-bridge configuration provide four-quadrant control when driven by an IR2104 or IRS2004 half-bridge driver. Designers should add 10V gate-drive boost because at low PWM duty cycles the high-side source pin swings near the negative rail, requiring a bootstrap circuit.
Recommended
Battery Protection and Hot-Swap in 24-36V Packs
In 24V-36V lithium battery packs and 48V backplane hot-swap controllers, the IRF7854TRPBF serves as the main disconnect or inrush-limiting element. The 80V VDS provides margin above the 42V maximum of a 10S Li-ion pack, and the 13.4 mΩ on-resistance keeps continuous conduction loss under 1.5W at 10A. In hot-swap service, the part's avalanche rating handles the brief over-voltage events when the output capacitors charge. The 4.9V VGS(th) ensures the device stays off until the gate driver commands it on, preventing false turn-on during pack assembly. Pair with a dedicated hot-swap controller for current-limit and fault response.
Recommended
Class-D Audio Output Stage
The IRF7854TRPBF is a strong candidate for the output half-bridge of sub-100W Class-D audio amplifiers operating from 24V-36V rails, where its 13.4 mΩ on-resistance minimizes crossover distortion and conduction loss. With ID = 10A, it can drive 4Ω loads at 50-80W RMS without exceeding SOA. The SO-8 package sits comfortably in the audio signal path without introducing measurable thermal distortion at typical listening levels (under 1W). Designers should drive the gate with a dedicated Class-D modulator IC that provides 10-12V gate drive and dead-time insertion to prevent shoot-through.
Recommended
Industrial Solenoid and Relay Driver
The IRF7854TRPBF is used as a low-side switch for 24V industrial solenoids, valves, and relays where its 80V VDS handles the inductive kick from a 24V coil (theoretically 24V but practically 60-80V due to stray inductance). The 10A current rating exceeds the steady-state current of most industrial actuators. The SO-8 package with proper PCB copper can sink up to 2.5W continuously, which is more than enough for most 24V coil applications. Add a flyback diode (1N4007 or higher-speed UF4007) across inductive loads to keep the IRF7854 within its avalanche rating during turn-off.
Recommended
Recommended Products Summary
Engineering reference data for IRF7854TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7854PBF | IRF7853TRPBF | IRF7815TRPBF | IRF7842TRPBF | BSC0921NDIATMA1 |
|---|---|---|---|---|---|---|
| Package | SO-8 | SO-8 (same) | SO-8 (same) | SO-8 (same) | SO-8 (same) | SO-8 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon (OptiMOS) |
| VDS max (V) | 80 V | 80 V | 100 V | 150 V | 40 V | 80 V |
| ID max at 25°C (A) | 10 A | 10 A | 8.3 A | 5.9 A | 17 A | 16 A |
| RDS(on) max at VGS=10V (mΩ) | 13.4 mΩ | 13.4 mΩ | 20 mΩ (typ) | 44 mΩ (typ) | 5.7 mΩ | 9.2 mΩ |
| VGS(th) max (V) | 4.9 V | 4.9 V | 5.0 V (typ) | 5.0 V (typ) | 4.5 V | 3.5 V |
| Total Gate Charge Qg (nC) | 27 nC | 27 nC | 26 nC (typ) | 29 nC (typ) | 31 nC (typ) | 12 nC |
| Technology | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | HEXFET (planar) | OptiMOS (trench) |
| RoHS / Lead-Free | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes (PBF) | Yes |
Key Differentiators
- Infineon HEXFET technology with explicit 48V telecom primary-side qualification (vs Generic 80V N-MOSFETs)
- Lower RDS(on) than higher-voltage family members (vs IRF7815TRPBF (150V variant))
- HEXFET planar process trades higher Qg for exceptional ruggedness vs OptiMOS trench (vs BSC0921NDIATMA1 (OptiMOS trench, same package))
Design Notes
Estimated: at 10A continuous current in the SO-8 package with a 1 sq.in. copper pour (theta_JA approximately 50°C/W), power dissipation is 1.34W (I²R with 13.4mΩ RDS(on)), resulting in a 67°C junction temperature rise above ambient - within the 150°C max but close at 85°C ambient. For continuous 10A operation, expand the drain copper pour to at least 2 sq.in. to drop theta_JA below 40°C/W. The drain pins (5-8) are electrically and thermally bonded to the exposed tab; maximize copper on all four pads.
Place the gate drive return path (pin 2 Kelvin source) directly to the gate driver ground, not to the power source path. The source pins 1, 2, 3 share internal bonding - use pin 2 as the gate-return reference to eliminate the source-inductance voltage spike that would otherwise slow switching and increase ringing. Keep the gate loop area under 0.5 sq.cm to minimize parasitic inductance, which causes VGS overshoot and potential Miller-induced turn-on.
Do not drive the IRF7854TRPBF with 3.3V logic - the 4.9V max VGS(th) means the device may operate in its linear region at 3.3V, dissipating 5-10W and failing within seconds. Use a dedicated gate driver (TC4420, IR2104, or similar) capable of sourcing/sinking at least 1A peak at 10V. For low-side switching, a 10V Zener from gate to source protects against VGS overshoot during fast transients. Add a 10kΩ gate-to-source pull-down resistor to keep the device off during MCU reset or brownout.
The SO-8 land pattern should follow the JEDEC standard SO-8 footprint with thermal pad extensions on the drain pins (5-8). Per IPC-7351, the recommended land is 1.0mm x 0.7mm for source/gate pads and 1.5mm x 1.0mm for the drain pads (5-8 connected together as a single thermal copper pour). This gives 4-5°C/W lower theta_JA than a minimum-footprint layout.
Compliance Information
Lead-free (PBF) per part-number suffix; JEDEC industrial qualification per datasheet; not AEC-Q100 qualified - this is a standard industrial/consumer part. RoHS and REACH compliance per Infineon product page; halogen-free status not explicitly stated in retrieved data.
