EP2S130F1020I4RB vs EP2S130F1020I4 Comparison
Detailed side-by-side comparison of EP2S130F1020I4RB by Intel and EP2S130F1020I4 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Intel
EP2S130F1020I4RB
EP2S130F1020I4RB - Stratix II FPGA 132540 Cells 1.2V FC-FBGA | Intel
EP2S130F1020I4RB ObsoleteIntel
EP2S130F1020I4
EP2S130F1020I4 - 132K LE Stratix II FPGA, 742 I/O, FC-FBGA-1020
EP2S130F1020I4 ObsoleteSpecification Comparison
| Parameter | EP2S130F1020I4RB | EP2S130F1020I4 |
|---|---|---|
| Brand | Intel | Intel |
| Category | FPGA & CPLD | FPGA & CPLD |
| Lifecycle Status | Obsolete | Obsolete |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $875.00 | $1,395.00 |
| Family | Stratix II | Stratix II |
| Logic Elements | 132,540 | 132,540 |
| Number of User I/O | 742 | β |
| Number of Logic Gates | 6,747,840 (equivalent gates) | β |
| Operating Frequency (Max) | 711.24 MHz | β |
| Process Technology | 90 nm | β |
| Core Supply Voltage | 1.2 V | β |
| Package | 1020-pin FC-FBGA | 1020-ball FC-FBGA (33x33 mm) |
| Mounting Type | Surface Mount | Surface Mount (FC-FBGA) |
| Operating Temperature | -40C to +100C (Industrial) | β |
| Speed Grade | I4 | I (industrial performance) |
| Number of Transceivers | 12 (up to 6.375 Gbps) | β |
| Embedded Memory | 6,747,840 bits (RAM blocks) | β |
| Number of PLLs | 4 (up to 16 clock pins) | β |
| Configuration Mode | JTAG / PS / PPS / EPCS / EPCQ | β |
| MSL Level | 3 | β |
| RoHS Status | [DATA_NEEDED: rohs_status] | Compliant (per distributor listings) |
| Equivalent LEs | β | ~180,000 |
| Adaptive Logic Modules (ALMs) | β | 53,016 |
| Embedded Memory (bits) | β | 6,747,840 |
| Embedded Memory (M512 blocks) | β | 530 |
| Embedded Memory (M4K blocks) | β | 768 |
| Embedded Memory (M-RAM blocks) | β | 4 |
| Embedded 18x18 Multipliers | β | 504 |
| DSP Blocks | β | 48 |
| User I/O Pins | β | 742 |
| User I/O Banks | β | 12 |
| Process Node | β | 90 nm CMOS, all-layer copper |
| Core Voltage (VCCINT) | β | 1.2 V |
| Device Revision | β | 4 |
| Operating Junction Temperature | β | -40C to +100C (industrial) |
| Configuration Scheme | β | Fast Passive Parallel x8, Passive Serial, JTAG |