EPF6016TI144-3N vs EPF6016TI144-3 Comparison

Detailed side-by-side comparison of EPF6016TI144-3N by Intel and EPF6016TI144-3 by Intel. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Intel
EPF6016TI144-3 EPF6016TI144-3 - FLEX 6000 FPGA, 1320 Cells, 117 I/O | Intel

EPF6016TI144-3 - FLEX 6000 FPGA, 1320 Cells, 117 I/O | Intel

EPF6016TI144-3 ⚠ Last Time Buy

Specification Comparison

Parameter EPF6016TI144-3N EPF6016TI144-3
Brand Intel Intel
Category FPGA & CPLD FPGA & CPLD
Lifecycle Status Obsolete Last Time Buy
Family FLEX 6000 FLEX 6000
Logic Elements 1,320 —
Usable Gates 16,000 —
Logic Array Blocks (LABs) 132 —
User I/O 117 —
Number of Pins 144 —
Package 144-LQFP (TQFP), gull-wing, 20 mm body 144-LQFP (TQFP)
Process Technology 0.42 µm CMOS, SRAM-based 0.42 µm CMOS SRAM
Core Supply Voltage (VCCINT) 5.0 V —
I/O Supply Voltage (VCCIO) 3.3 V or 5.0 V (MultiVolt) —
Internal Operating Frequency 125 MHz (max) —
Speed Grade -3 (faster than -4, slower than -2) -3
Operating Temperature 0 °C to +85 °C (industrial, 'N' suffix) 0 C to 85 C (commercial)
Configuration Method Serial EPROM or JTAG (SRAM-based) —
Mounting Type Surface Mount Surface Mount
RoHS Status [DATA_NEEDED: RoHS compliance status] Compliant
Lead-Free [DATA_NEEDED: lead-free status] —
Logic Elements / Cells — 1320
Typical Gates — 16,000
User I/Os — 117
Internal Frequency (max) — 125 MHz
Supply Voltage VCCINT — 5 V
I/O Supply Voltage VCCIO — 3.3 V or 5 V
Configuration Memory — SRAM (volatile, in-system reconfigurable)
Programming Interface — JTAG (IEEE 1149.1) via ByteBlaster / BitBlaster

Datasheets & Resources

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