GAN111-650WSBQ vs GAN111-650WSB Comparison
Detailed side-by-side comparison of GAN111-650WSBQ by Nexperia and GAN111-650WSB by Nexperia. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | GAN111-650WSBQ | GAN111-650WSB |
|---|---|---|
| Brand | Nexperia | Nexperia |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $9.42 | $2.95 |
| Technology | GaN HEMT H2 + low-voltage Si MOSFET cascode | GaN HEMT H2 (cascode, normally-off) |
| Polarity | N-Channel, normally-off (GaN FET) | — |
| Drain-Source Voltage (VDS) | 650 V | 650 V |
| On-State Resistance (RDS(on)) | 97 mOhm | — |
| Continuous Drain Current (ID) | 21 A (Ta) | — |
| Power Dissipation (PD) | 107 W (Ta) | — |
| Drive Voltage | 10 V | — |
| Operating Temperature Range | -55 C to +175 C | — |
| Package | TO-247-3L (SOT429), Through Hole | TO-247 (SOT429) through-hole, 3-lead |
| Mounting Type | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: input capacitance] | — |
| Thermal Resistance (Rth(j-c)) | [DATA_NEEDED: junction-to-case thermal resistance] | — |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Nexperia |
| On-Resistance RDS(on) (typ) | — | 97 mΩ |
| Continuous Drain Current (ID, at Ta) | — | 21 A |
| Power Dissipation (PD, at Ta) | — | 107 W |
| Polarity / Channel Type | — | N-Channel |
| Gate Drive Compatibility | — | Standard silicon MOSFET gate drive (0-12 V typical) |
| Operating Mode | — | Normally-off (cascode) |
| Target Applications | — | SMPS, PFC, OBC, solar inverter, industrial drives |
| Orderable Part Suffix | — | WSBQ (tape-and-reel/ammopack) |