H5AN8G6NAFR-UHC vs NT5CC256M16DP-DIH Comparison
Detailed side-by-side comparison of H5AN8G6NAFR-UHC by SK hynix and NT5CC256M16DP-DIH by Nanya Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
SK hynix
H5AN8G6NAFR-UHC
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
H5AN8G6NAFR-UHC β ActiveNanya Technology
NT5CC256M16DP-DIH
NT5CC256M16DP-DIH - 4Gb DDR3L SDRAM 256Mx16 1.35V | Nanya
NT5CC256M16DP-DIH β ActiveSpecification Comparison
| Parameter | H5AN8G6NAFR-UHC | NT5CC256M16DP-DIH |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.12 | $20.00 |
| Memory Type | DDR4 SDRAM | DDR3L SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organization | 512M x 16 | 256M x 16 |
| Supply Voltage | 1.2 V | 1.35 V |
| Data Rate | 2400 MT/s | 1600 Mbps (DDR3-1600) |
| Package | FBGA-96 | 96-ball VFBGA |
| Operating Temperature | 0Β°C to +85Β°C | β |
| Number of Terminals | 96 | β |
| Package Code | TFBGA | β |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 11 (typical) |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| Refresh | Auto self-refresh | β |
| Operating Temperature Range | β | 0Β°C to +95Β°C |
| Auto Self-Refresh | β | Yes |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |
| Write Leveling | β | Yes |
| Dynamic On-Chip Termination | β | Yes |
| ZQ Calibration | β | Yes |
| RoHS | β | Compliant |