H5TC4G63AFR-PBA vs H5TC4G63AFR-PBI Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBA by SK hynix and H5TC4G63AFR-PBI by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA βœ“ Active
SK hynix
H5TC4G63AFR-PBI

H5TC4G63AFR-PBI - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBI Obsolete

Specification Comparison

Parameter H5TC4G63AFR-PBA H5TC4G63AFR-PBI
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Obsolete
Stock Status In Stock In Stock
Unit Price (USD) $3.98 $6.50
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb β€”
Organization 256M x 16 256M x 16
Supply Voltage (VDD/VDDQ) 1.35V β€”
Data Rate 1866 Mbps (PC3L-14900) DDR3-1600 (PC3L-12800)
Package 96-ball FBGA 96-ball FBGA (TFBGA, BGA96, 9x16, 32)
Ball Pitch 0.8mm β€”
Number of Banks 8 8
Burst Length 8 and 4 (with burst chop) 8 (BL8)
CAS Latency (CL) 11, 12, 13 β€”
Operating Temperature Range 0Β°C to +95Β°C (Tcase) -40Β°C to +95Β°C
Interface 16-bit I/O β€”
On-Die Termination (ODT) Yes Yes
ZQ Calibration Yes β€”
Write Leveling Yes β€”
Auto Self-Refresh Yes β€”
Partial Array Self-Refresh Yes β€”
RoHS Compliant β€”
Total Memory Size β€” 4 Gb
Supply Voltage β€” 1.35 V
CAS Latency β€” Programmable
Refresh Period β€” 7.8 us at 85Β°C
Mounting Type β€” Surface Mount
Number of Terminals β€” 96
RoHS Status β€” Compliant

Datasheets & Resources

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