H5TC4G63AFR-PBA vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of H5TC4G63AFR-PBA by SK hynix and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL β ActiveSpecification Comparison
| Parameter | H5TC4G63AFR-PBA | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | SK hynix | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.98 | $5.60 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | β |
| Organization | 256M x 16 | β |
| Supply Voltage (VDD/VDDQ) | 1.35V | β |
| Data Rate | 1866 Mbps (PC3L-14900) | 1600 Mbps |
| Package | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Ball Pitch | 0.8mm | β |
| Number of Banks | 8 | β |
| Burst Length | 8 and 4 (with burst chop) | β |
| CAS Latency (CL) | 11, 12, 13 | β |
| Operating Temperature Range | 0Β°C to +95Β°C (Tcase) | β |
| Interface | 16-bit I/O | Parallel |
| On-Die Termination (ODT) | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Auto Self-Refresh | Yes | β |
| Partial Array Self-Refresh | Yes | β |
| RoHS | Compliant | β |
| Memory Size | β | 4Gbit (256M x 16) |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 20 ns |
| Supply Voltage | β | 1.35V (backward compatible to 1.5V) |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | 0Β°C ~ 95Β°C |
| Memory Format | β | DRAM |
| Technology | β | SDRAM - DDR3L |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Number of Terminals | β | 96 |