H5TC4G63AFR-PBR vs K4B4G1646E-BMK0 Comparison

Detailed side-by-side comparison of H5TC4G63AFR-PBR by SK hynix and K4B4G1646E-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5TC4G63AFR-PBR H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63AFR-PBR βœ“ Active
Samsung Electronics
K4B4G1646E-BMK0

K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 βœ“ Active

Specification Comparison

Parameter H5TC4G63AFR-PBR K4B4G1646E-BMK0
Brand SK hynix Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $5.91 $6.50
Memory Type DDR3L SDRAM DDR3L SDRAM
Organization 256M x 16 256M x 16
Total Capacity 4Gb β€”
Supply Voltage 1.35V (1.5V compatible) β€”
Data Rate 1600 Mbps (PC3L-12800) 1600 Mbps
CAS Latency 11 β€”
tRCD/tRP 11 β€”
Clock Frequency 800 MHz 800 MHz
tCK 1.25 ns β€”
tRCD 13.125 ns β€”
Burst Length 8 (BL8) with burst chop (BC4) β€”
Number of Banks 8 β€”
Refresh Interval 7.8us at 85C, 3.9us at 95C β€”
Package 96-ball FBGA (PBGA96) 96-FBGA
Package Dimensions 13.5mm x 9.0mm β€”
Ball Pitch 0.8mm β€”
I/O Interface SSTL-15 β€”
Operating Temperature 0C to +95C -40Β°C to +95Β°C
RoHS Compliant β€”
Lead-Free Yes β€”
Halogen-Free Yes β€”
Density β€” 4 Gb
Speed Grade β€” 1600 Mbps
Voltage β€” 1.35 V
Interface β€” Parallel
Mounting Type β€” Surface Mount
Auto Precharge β€” Yes
Asynchronous Reset β€” Yes
ZQ Calibration β€” Yes
Dynamic ODT β€” Yes
Data Mask β€” Yes

Datasheets & Resources

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