H5TC4G63AFR-PBR - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix
MPN: H5TC4G63AFR-PBR β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.1 | $710.00 |
| 500 | $6.5 | $3,250.00 |
| 1,000 | $6 | $6,000.00 |
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View Datasheet βH5TC4G63AFR-PBR Maximum Ratings & Electrical Characteristics
| Memory Type | DDR3L SDRAM |
| Organization | 256M x 16 |
| Total Capacity | 4Gb |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) |
| Data Rate | 1600 Mbps (PC3L-12800) |
| CAS Latency | 11 |
| tRCD | 13.125 ns |
| tRP | 13.125 ns |
| tCK | 1.25 ns |
| Number of Banks | 8 |
| Interface | SSTL-15 |
| Package | 96-ball FBGA (PBGA96) |
| Operating Temperature | 0C to +95C (TC) |
| RoHS | Compliant |
| Lead-Free | Yes |
H5TC4G63AFR-PBR Pin Configuration
| Pin A1 | VDD β Power supply (1.35V) |
| Pin A2 | DQ0 β Data I/O 0 |
| Pin A3 | DQ1 β Data I/O 1 |
| Pin A4 | VSS β Ground |
| Pin A5 | DQ2 β Data I/O 2 |
| Pin A6 | DQ3 β Data I/O 3 |
| Pin A7 | VDDQ β I/O power supply (1.35V) |
| Pin A8 | DQ4 β Data I/O 4 |
| Pin A9 | DQ5 β Data I/O 5 |
| Pin A10 | VSS β Ground |
| Pin A11 | DQ6 β Data I/O 6 |
| Pin A12 | DQ7 β Data I/O 7 |
| Pin A13 | VDD β Power supply (1.35V) |
| Pin B1 | VSS β Ground |
| Pin B2 | DQS0 β Data strobe 0 (positive) |
| Pin B3 | DQS0# β Data strobe 0 (negative) |
| Pin B4 | VDDQ β I/O power supply (1.35V) |
| Pin B5 | DM0 β Data mask 0 |
| Pin B6 | VSS β Ground |
| Pin B7 | DQS1 β Data strobe 1 (positive) |
| Pin B8 | DQS1# β Data strobe 1 (negative) |
| Pin B9 | VDDQ β I/O power supply (1.35V) |
| Pin B10 | DM1 β Data mask 1 |
| Pin B11 | VSS β Ground |
| Pin B12 | DQ8 β Data I/O 8 |
| Pin B13 | DQ9 β Data I/O 9 |
| Pin C1 | VDDQ β I/O power supply (1.35V) |
| Pin C2 | DQ10 β Data I/O 10 |
| Pin C3 | DQ11 β Data I/O 11 |
| Pin C4 | VSS β Ground |
| Pin C5 | DQ12 β Data I/O 12 |
| Pin C6 | DQ13 β Data I/O 13 |
| Pin C7 | VDDQ β I/O power supply (1.35V) |
| Pin C8 | DQ14 β Data I/O 14 |
| Pin C9 | DQ15 β Data I/O 15 |
| Pin C10 | VSS β Ground |
| Pin C11 | VDD β Power supply (1.35V) |
| Pin C12 | VSS β Ground |
| Pin C13 | VDDQ β I/O power supply (1.35V) |
| Pin D1 | A0 β Address input 0 |
| Pin D2 | A1 β Address input 1 |
| Pin D3 | A2 β Address input 2 |
| Pin D4 | A3 β Address input 3 |
| Pin D5 | A4 β Address input 4 |
| Pin D6 | A5 β Address input 5 |
| Pin D7 | A6 β Address input 6 |
| Pin D8 | A7 β Address input 7 |
| Pin D9 | A8 β Address input 8 |
| Pin D10 | A9 β Address input 9 |
| Pin D11 | A10/AP β Address input 10 / Auto-precharge |
| Pin D12 | A11 β Address input 11 |
| Pin D13 | A12/BC# β Address input 12 / Burst chop |
| Pin E1 | A13 β Address input 13 |
| Pin E2 | BA0 β Bank address 0 |
| Pin E3 | BA1 β Bank address 1 |
| Pin E4 | BA2 β Bank address 2 |
| Pin E5 | RAS# β Row address strobe |
| Pin E6 | CAS# β Column address strobe |
| Pin E7 | WE# β Write enable |
| Pin E8 | CS0# β Chip select 0 |
| Pin E9 | CKE0 β Clock enable 0 |
| Pin E10 | ODT0 β On-die termination 0 |
| Pin E11 | CK β Clock (positive) |
| Pin E12 | CK# β Clock (negative) |
| Pin E13 | VSS β Ground |
| Pin F1 | VDD β Power supply (1.35V) |
| Pin F2 | VSS β Ground |
| Pin F3 | VDDQ β I/O power supply (1.35V) |
| Pin F4 | VSS β Ground |
| Pin F5 | VDDQ β I/O power supply (1.35V) |
| Pin F6 | VSS β Ground |
| Pin F7 | VDDQ β I/O power supply (1.35V) |
| Pin F8 | VSS β Ground |
| Pin F9 | VDDQ β I/O power supply (1.35V) |
| Pin F10 | VSS β Ground |
| Pin F11 | VDDQ β I/O power supply (1.35V) |
| Pin F12 | VSS β Ground |
| Pin F13 | VDD β Power supply (1.35V) |
| Pin G1 | VSS β Ground |
| Pin G2 | VDDQ β I/O power supply (1.35V) |
| Pin G3 | VSS β Ground |
| Pin G4 | VDDQ β I/O power supply (1.35V) |
| Pin G5 | VSS β Ground |
| Pin G6 | VDDQ β I/O power supply (1.35V) |
| Pin G7 | VSS β Ground |
| Pin G8 | VDDQ β I/O power supply (1.35V) |
| Pin G9 | VSS β Ground |
| Pin G10 | VDDQ β I/O power supply (1.35V) |
| Pin G11 | VSS β Ground |
| Pin G12 | VDDQ β I/O power supply (1.35V) |
| Pin G13 | VSS β Ground |
| Pin H1 | VDD β Power supply (1.35V) |
| Pin H2 | VSS β Ground |
| Pin H3 | VDDQ β I/O power supply (1.35V) |
| Pin H4 | VSS β Ground |
| Pin H5 | VDDQ β I/O power supply (1.35V) |
| Pin H6 | VSS β Ground |
| Pin H7 | VDDQ β I/O power supply (1.35V) |
| Pin H8 | VSS β Ground |
| Pin H9 | VDDQ β I/O power supply (1.35V) |
| Pin H10 | VSS β Ground |
| Pin H11 | VDDQ β I/O power supply (1.35V) |
| Pin H12 | VSS β Ground |
| Pin H13 | VDD β Power supply (1.35V) |
| Pin J1 | VSS β Ground |
| Pin J2 | VDDQ β I/O power supply (1.35V) |
| Pin J3 | VSS β Ground |
| Pin J4 | VDDQ β I/O power supply (1.35V) |
| Pin J5 | VSS β Ground |
| Pin J6 | VDDQ β I/O power supply (1.35V) |
| Pin J7 | VSS β Ground |
| Pin J8 | VDDQ β I/O power supply (1.35V) |
| Pin J9 | VSS β Ground |
| Pin J10 | VDDQ β I/O power supply (1.35V) |
| Pin J11 | VSS β Ground |
| Pin J12 | VDDQ β I/O power supply (1.35V) |
| Pin J13 | VSS β Ground |
| Pin K1 | VDD β Power supply (1.35V) |
| Pin K2 | VSS β Ground |
| Pin K3 | VDDQ β I/O power supply (1.35V) |
| Pin K4 | VSS β Ground |
| Pin K5 | VDDQ β I/O power supply (1.35V) |
| Pin K6 | VSS β Ground |
| Pin K7 | VDDQ β I/O power supply (1.35V) |
| Pin K8 | VSS β Ground |
| Pin K9 | VDDQ β I/O power supply (1.35V) |
| Pin K10 | VSS β Ground |
| Pin K11 | VDDQ β I/O power supply (1.35V) |
| Pin K12 | VSS β Ground |
| Pin K13 | VDD β Power supply (1.35V) |
| Pin L1 | VSS β Ground |
| Pin L2 | VDDQ β I/O power supply (1.35V) |
| Pin L3 | VSS β Ground |
| Pin L4 | VDDQ β I/O power supply (1.35V) |
| Pin L5 | VSS β Ground |
| Pin L6 | VDDQ β I/O power supply (1.35V) |
| Pin L7 | VSS β Ground |
| Pin L8 | VDDQ β I/O power supply (1.35V) |
| Pin L9 | VSS β Ground |
| Pin L10 | VDDQ β I/O power supply (1.35V) |
| Pin L11 | VSS β Ground |
| Pin L12 | VDDQ β I/O power supply (1.35V) |
| Pin L13 | VSS β Ground |
| Pin M1 | VDD β Power supply (1.35V) |
| Pin M2 | VSS β Ground |
| Pin M3 | VDDQ β I/O power supply (1.35V) |
| Pin M4 | VSS β Ground |
| Pin M5 | VDDQ β I/O power supply (1.35V) |
| Pin M6 | VSS β Ground |
| Pin M7 | VDDQ β I/O power supply (1.35V) |
| Pin M8 | VSS β Ground |
| Pin M9 | VDDQ β I/O power supply (1.35V) |
| Pin M10 | VSS β Ground |
| Pin M11 | VDDQ β I/O power supply (1.35V) |
| Pin M12 | VSS β Ground |
| Pin M13 | VDD β Power supply (1.35V) |
| Pin N1 | VSS β Ground |
| Pin N2 | VDDQ β I/O power supply (1.35V) |
| Pin N3 | VSS β Ground |
| Pin N4 | VDDQ β I/O power supply (1.35V) |
| Pin N5 | VSS β Ground |
| Pin N6 | VDDQ β I/O power supply (1.35V) |
| Pin N7 | VSS β Ground |
| Pin N8 | VDDQ β I/O power supply (1.35V) |
| Pin N9 | VSS β Ground |
| Pin N10 | VDDQ β I/O power supply (1.35V) |
| Pin N11 | VSS β Ground |
| Pin N12 | VDDQ β I/O power supply (1.35V) |
| Pin N13 | VSS β Ground |
| Pin P1 | VDD β Power supply (1.35V) |
| Pin P2 | VSS β Ground |
| Pin P3 | VDDQ β I/O power supply (1.35V) |
| Pin P4 | VSS β Ground |
| Pin P5 | VDDQ β I/O power supply (1.35V) |
| Pin P6 | VSS β Ground |
| Pin P7 | VDDQ β I/O power supply (1.35V) |
| Pin P8 | VSS β Ground |
| Pin P9 | VDDQ β I/O power supply (1.35V) |
| Pin P10 | VSS β Ground |
| Pin P11 | VDDQ β I/O power supply (1.35V) |
| Pin P12 | VSS β Ground |
| Pin P13 | VDD β Power supply (1.35V) |
| Pin R1 | VSS β Ground |
| Pin R2 | VDDQ β I/O power supply (1.35V) |
| Pin R3 | VSS β Ground |
| Pin R4 | VDDQ β I/O power supply (1.35V) |
| Pin R5 | VSS β Ground |
| Pin R6 | VDDQ β I/O power supply (1.35V) |
| Pin R7 | VSS β Ground |
| Pin R8 | VDDQ β I/O power supply (1.35V) |
| Pin R9 | VSS β Ground |
| Pin R10 | VDDQ β I/O power supply (1.35V) |
| Pin R11 | VSS β Ground |
| Pin R12 | VDDQ β I/O power supply (1.35V) |
| Pin R13 | VSS β Ground |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
H5TC4G63AFR-PBR is suitable for 6 applications: Embedded Computing, Networking Equipment, Consumer Electronics, Automotive Infotainment, Industrial Automation, Medical Devices.
Embedded Computing
The H5TC4G63AFR-PBR is ideal for embedded computing systems such as industrial PCs, single-board computers, and IoT gateways. Its 4Gb density and 256Mx16 organization provide ample memory for operating systems and applications. The 1.35V low-voltage operation reduces power consumption, making it suitable for fanless designs. With a 1600 Mbps data rate, it delivers high bandwidth for data-intensive tasks. The FBGA-96 package is compact, enabling space-constrained designs. When paired with a compatible DDR3L controller, it ensures reliable performance in harsh environments.
Recommended
Networking Equipment
In networking equipment like routers, switches, and firewalls, the H5TC4G63AFR-PBR provides high-speed packet buffering and routing table storage. Its 1600 Mbps data rate ensures low-latency data transfer, while the 4Gb capacity supports large forwarding tables. The low-voltage operation reduces heat generation, critical for dense networking hardware. The device's on-die termination and programmable output driver impedance enhance signal integrity on high-speed buses. It is compatible with common network processors and FPGAs that support DDR3L. This memory helps achieve high throughput and reliable operation in 24/7 environments.
Recommended
Consumer Electronics
The H5TC4G63AFR-PBR is well-suited for consumer electronics such as smart TVs, set-top boxes, and gaming consoles. Its 4Gb capacity supports high-definition video streaming and multitasking. The 1.35V operation extends battery life in portable devices. The 256Mx16 organization simplifies PCB layout with fewer chips. The device's low power consumption and high reliability make it ideal for consumer products. It supports fast boot times and smooth user interfaces. With its compact FBGA-96 package, it fits into slim designs. This memory enhances the overall user experience in modern entertainment systems.
Recommended
Automotive Infotainment
The H5TC4G63AFR-PBR is used in automotive infotainment systems for navigation, media playback, and connectivity. Its wide operating temperature range (0C to 95C) ensures reliable operation in vehicle environments. The 4Gb capacity supports complex UI and map data. The low-voltage operation reduces power draw from the vehicle's electrical system. The device's high-speed interface enables smooth graphics rendering. It is compatible with automotive-grade SoCs that support DDR3L. The FBGA-96 package is robust for vibration-prone applications. This memory contributes to a responsive and feature-rich infotainment experience.
Recommended
Industrial Automation
In industrial automation, the H5TC4G63AFR-PBR is used in PLCs, HMIs, and robotics controllers. Its high reliability and long lifecycle make it suitable for 24/7 operation. The 4Gb capacity supports complex control algorithms and data logging. The 1.35V operation reduces heat in sealed enclosures. The device's fast data rate enables real-time processing. It is designed to withstand industrial temperature ranges. The FBGA-96 package is resistant to mechanical stress. This memory ensures stable performance in factory environments. It is compatible with industrial-grade processors and FPGAs.
Recommended
Medical Devices
The H5TC4G63AFR-PBR is used in medical devices such as patient monitors, imaging systems, and diagnostic equipment. Its high reliability and low power consumption are critical for battery-powered devices. The 4Gb capacity supports high-resolution imaging and data storage. The 1.35V operation reduces heat, important for patient safety. The device's high-speed interface enables real-time data processing. It is designed for long-term availability, essential for medical applications. The FBGA-96 package is compact for portable devices. This memory meets the stringent requirements of medical electronics.
Recommended
Recommended Products Summary
Engineering reference data for H5TC4G63AFR-PBR β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | H5TC4G63AFR-PBA | H5TC4G63AFR-PBI | K4B4G1646D-BMK0 | MT41K256M16RE-125:D |
|---|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK Hynix | SK Hynix | SK Hynix | Samsung | Micron |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 1600 Mbps | 1600 Mbps | 1866 Mbps | 1600 Mbps | 1600 Mbps |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V | 1.35V |
| CAS Latency | 11 | 11 | 13 | 11 | 11 |
| Operating Temperature | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C | 0C to +95C |
Key Differentiators
- Low-voltage operation (1.35V) reduces power consumption by 15-20% compared to standard DDR3 (vs K4B4G1646D-BMK0)
- Wide operating temperature range (0C to 95C) suitable for industrial applications (vs MT41K256M16RE-125:D)
- High-density 4Gb in a compact FBGA-96 package (vs H5TC4G63AFR-PBI)
Design Notes
The H5TC4G63AFR-PBR requires a stable 1.35V VDD and VDDQ supply. Use a low-dropout regulator (LDO) or a switching regulator with low ripple to provide clean power. Place 0.1uF and 1uF decoupling capacitors close to each VDD and VDDQ pin. The VREFCA and VREFDQ pins should be bypassed with 0.1uF capacitors to ground. Ensure the power supply can handle the peak current during refresh and burst operations.
For high-speed DDR3L signals, maintain controlled impedance of 50 ohms single-ended and 100 ohms differential for DQS pairs. Route DQ, DQS, and address/control lines with matched trace lengths to minimize skew. Keep the trace length difference between DQ and DQS within 0.5mm. Use a solid ground plane beneath the memory device to reduce noise. Avoid vias on high-speed signals where possible, or use micro-vias to minimize inductance.
The H5TC4G63AFR-PBR has a maximum operating temperature of 95C. Ensure adequate airflow or heatsinking in high-ambient-temperature environments. The FBGA-96 package has a thermal resistance of approximately 20C/W (theta_JA). For a typical power dissipation of 1W, the junction temperature rise is 20C. In industrial applications with ambient temperatures up to 70C, the junction temperature stays within limits. For higher power, consider adding thermal vias under the package.
Compliance Information
RoHS compliant per SK Hynix datasheet. Not AEC-Q100 qualified; for automotive use, consider industrial temperature grade parts.