H5TC4G63CFR-PBA vs K4B4G1646E-BMK0 Comparison
Detailed side-by-side comparison of H5TC4G63CFR-PBA by SK hynix and K4B4G1646E-BMK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BMK0
K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung
K4B4G1646E-BMK0 β ActiveSpecification Comparison
| Parameter | H5TC4G63CFR-PBA | K4B4G1646E-BMK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.23 | $6.50 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | β |
| Package | 96-ball FBGA (PBGA96) | 96-FBGA |
| Clock Input | Fully differential (CK, CK) | β |
| Data Strobe | Differential (DQS, DQS) | β |
| On-chip DLL | Yes | β |
| Data Mask (DM) | Yes | β |
| Auto Precharge | Yes | Yes |
| Auto Self-Refresh | Yes | β |
| Dynamic ODT | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| Write Leveling | Yes | β |
| Asynchronous Reset | Yes | Yes |
| RoHS | Compliant | β |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | β |
| Speed Grade | β | 1600 Mbps |
| Voltage | β | 1.35 V |
| Operating Temperature | β | -40Β°C to +95Β°C |
| Interface | β | Parallel |
| Clock Frequency | β | 800 MHz |
| Data Rate | β | 1600 Mbps |
| Mounting Type | β | Surface Mount |
| Data Mask | β | Yes |