H5TC4G63CFR-PBA vs MT41K256M16RE-15E:D Comparison
Detailed side-by-side comparison of H5TC4G63CFR-PBA by SK hynix and MT41K256M16RE-15E:D by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16RE-15E:D
MT41K256M16RE-15E:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-15E:D β ActiveSpecification Comparison
| Parameter | H5TC4G63CFR-PBA | MT41K256M16RE-15E:D |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.23 | $7.20 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | β |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V +0.100/-0.067V | β |
| Package | 96-ball FBGA (PBGA96) | 96-FBGA (10x14 mm) |
| Clock Input | Fully differential (CK, CK) | β |
| Data Strobe | Differential (DQS, DQS) | β |
| On-chip DLL | Yes | β |
| Data Mask (DM) | Yes | β |
| Auto Precharge | Yes | β |
| Auto Self-Refresh | Yes | β |
| Dynamic ODT | Yes | β |
| ZQ Calibration | Yes | β |
| Write Leveling | Yes | β |
| Asynchronous Reset | Yes | β |
| RoHS | Compliant | β |
| Halogen-Free | Yes | β |
| Lead-Free | Yes | Yes |
| Memory Size | β | 4Gb (256M x 16) |
| Data Rate | β | 667 MHz (DDR3L-1333) |
| Access Time | β | 13.5 ns |
| Supply Voltage | β | 1.283 V to 1.45 V (nominal 1.35 V) |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | -40Β°C to 95Β°C (TC) |
| Interface | β | Parallel |
| CAS Latency | β | 11 (typical) |
| Burst Length | β | 8, 4 |
| Number of Pins | β | 96 |
| RoHS Status | β | Compliant |