H5TQ4G63AFR-H9C vs K4B4G1646E-BYK0 Comparison
Detailed side-by-side comparison of H5TQ4G63AFR-H9C by SK hynix and K4B4G1646E-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK0
K4B4G1646E-BYK0 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK0 β ActiveSpecification Comparison
| Parameter | H5TQ4G63AFR-H9C | K4B4G1646E-BYK0 |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $1.80 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Density | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.5 V | 1.35 V (1.283 V to 1.45 V) |
| Clock Speed (tCK) | 0.255 ns | β |
| Package | 96-ball TFBGA | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Package Shape | RECTANGULAR | β |
| Refresh Cycles | 8192 | β |
| Number of Terminals | 96 | β |
| Temperature Grade | OTHER | β |
| RoHS | Compliant | Compliant |
| Halogen Free | Yes | β |
| Mounting Type | Surface Mount | β |
| Data Rate | 3.9 Gbps per pin (approx) | DDR3-1600 (800 MHz) |
| Ball Pitch | 0.8 mm | β |
| Operating Temperature | β | 0Β°C to +95Β°C (TC) |
| CAS Latency | β | 11 (CL-tRCD-tRP) |
| Burst Length | β | 8 (fixed), 4 (burst chop) |
| On-Die Termination | β | Yes (dynamic ODT) |
| ZQ Calibration | β | Yes |
| Auto Precharge | β | Yes |
| Self-Refresh | β | Yes |
| Asynchronous Reset | β | Yes |
| Data Mask | β | Yes |