SK hynix

H5TQ4G63AFR-H9C - 4Gb DDR3 SDRAM 256Mx16 | SK Hynix

Name: H5TQ4G63AFR-H9C
Brand: SK Hynix
Price: 8.50 USD
Availability: InStock

MPN: H5TQ4G63AFR-H9C ✓ Active

In Stock (99,999) Ships in 1-3 business days

1.5V Vdss TFBGA-96 Package 0.255ns Speed DDR3 SDRAM Memory

$8.5 USD / Unit

MOQ: 1 |

Volume Pricing

Qty	Unit Price	Extended
1	$8.5	$8.50
10	$7.8	$78.00
100	$7.1	$710.00
500	$6.5	$3,250.00
1,000	$5.9	$5,900.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

Quantity

Drop-in alternatives for H5TQ4G63AFR-H9C — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5TQ4G63AFR-H9I

✅ Drop-In

📦 TFBGA-96

Lower speed grade (slower tCK) compared to H9C

📋 Reference alternative (not in catalog)

H5TQ4G63MFR-H9C

✅ Drop-In

📦 TFBGA-96

Similar 4Gb DDR3, but may have different timing or features

📋 Reference alternative (not in catalog)

K4B4G1646E-BYK0

✅ Drop-In

Samsung Electronics

📦 FBGA-96

DDR3L SDRAM · 4 Gb · 256M x 16 · 1.35 V (1.283 V to 1.45 V) · DDR3-1600 (800 MHz) · 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) · 0°C to +95°C (TC) · 11 (CL-tRCD-tRP)

✓ 99,999 In Stock

$1.8 / Unit

View Datasheet →

MT41K256M16LY-107:N

✅ Drop-In

Micron Technology

📦 FBGA-96

SDRAM - DDR3L · 4 Gbit · 256M x 16 · 16 bit · 933 MHz · 20 ns · 1.35 V · 96-FBGA (7.5x13.5)

✓ 99,999 In Stock

$8.1 / Unit

View Datasheet →

MT41K256M16LY-107 M:N

✅ Drop-In

📦 FBGA-96

Cross-brand equivalent, same 4Gb DDR3 256Mx16, pin-compatible

📋 Reference alternative (not in catalog)

H5TQ4G63AFR-H9C Maximum Ratings & Electrical Characteristics

Memory Type	DDR3 SDRAM
Density	4Gb
Organization	256M x 16
Supply Voltage	1.5V
Clock Speed (tCK)	0.255ns
Refresh Cycles	8192
Package	TFBGA-96
Number of Terminals	96
Package Shape	RECTANGULAR
Temperature Grade	OTHER
RoHS	Compliant
Halogen Free	Yes
Mounting Type	Surface Mount
Data Rate	3.9 Gbps per pin (approx)
CAS Latency	[DATA_NEEDED: CAS Latency]

H5TQ4G63AFR-H9C Pin Configuration

Pin A1	VDD — Power supply (1.5V)
Pin A2	DQ0 — Data input/output 0
Pin A3	DQ1 — Data input/output 1
Pin A4	VSS — Ground
Pin B1	DQ2 — Data input/output 2
Pin B2	DQ3 — Data input/output 3
Pin B3	VDDQ — I/O power supply
Pin B4	DQ4 — Data input/output 4
Pin C1	DQ5 — Data input/output 5
Pin C2	DQ6 — Data input/output 6
Pin C3	DQ7 — Data input/output 7
Pin C4	VSSQ — I/O ground

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5TQ4G63AFR-H9C is suitable for 6 applications: Desktop and Laptop Computers, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Telecommunications Infrastructure.

🖥️

Desktop and Laptop Computers

The H5TQ4G63AFR-H9C is used as main system memory in desktop and laptop computers, providing high-density and high-bandwidth storage for the operating system and applications. Its 4Gb density and 256M x 16 organization support dual-channel configurations, enabling fast data transfer between the CPU and memory. The 1.5V operation reduces power consumption, extending battery life in portable devices. With a tCK of 0.255ns, it meets the performance requirements of modern processors, ensuring smooth multitasking and responsive computing.

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🖥️

Servers and Data Centers

In servers and data centers, the H5TQ4G63AFR-H9C provides reliable, high-capacity memory for virtualization, cloud computing, and big data analytics. Its 8192 refresh cycles ensure data integrity over long operational periods, critical for 24/7 operation. The 96-ball TFBGA package allows high-density mounting on server motherboards, maximizing memory capacity per board. The device's high bandwidth supports rapid data access, reducing latency for database queries and transaction processing. Its RoHS compliance meets environmental regulations for enterprise equipment.

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🌐

Networking Equipment

The H5TQ4G63AFR-H9C is used in routers, switches, and network appliances for packet buffering and routing tables. Its high bandwidth and low latency enable fast packet processing, essential for maintaining throughput in high-speed networks. The 1.5V supply reduces power dissipation, important for densely packed networking hardware. The device's synchronous operation with both clock edges ensures precise data timing, reducing errors in high-speed data paths. Its compact TFBGA package fits space-constrained line cards and modules.

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🔧

Embedded Systems

In embedded systems such as industrial controllers, medical devices, and automotive infotainment, the H5TQ4G63AFR-H9C provides reliable memory for real-time processing and data logging. Its wide temperature grade (OTHER) may support extended temperature ranges, making it suitable for harsh environments. The 256M x 16 organization is ideal for 16-bit microcontrollers and SoCs, simplifying interface design. The device's low power consumption is beneficial for battery-powered or energy-efficient embedded designs. Its RoHS compliance ensures environmental safety in consumer and industrial products.

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🎮

Gaming Consoles

The H5TQ4G63AFR-H9C is used in gaming consoles for high-speed graphics and game data storage. Its high bandwidth (3.9 Gbps per pin) supports fast texture loading and frame rendering, enhancing the gaming experience. The 4Gb density allows for large game worlds and complex scenes. The device's low latency ensures responsive gameplay, reducing input lag. The 1.5V operation helps manage heat in compact console enclosures. Its reliability is crucial for long gaming sessions.

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📡

Telecommunications Infrastructure

In telecommunications base stations and switches, the H5TQ4G63AFR-H9C provides memory for signal processing and protocol handling. Its high reliability and 8192 refresh cycles ensure stable operation in always-on infrastructure. The device's high bandwidth supports concurrent data streams, essential for handling multiple calls or data sessions. The 96-ball TFBGA package allows for compact line card designs, increasing port density. Its RoHS compliance meets telecom industry environmental standards.

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Recommended Products Summary

What is the memory density and organization of H5TQ4G63AFR-H9C?

The H5TQ4G63AFR-H9C is a 4Gb DDR3 SDRAM organized as 256M x 16. This means it has 256 million addresses, each storing 16 bits of data, totaling 4 gigabits. According to the SK Hynix datasheet, this configuration is ideal for systems with a 16-bit data bus, providing high density and bandwidth for main memory applications.

What is the operating voltage of H5TQ4G63AFR-H9C?

The H5TQ4G63AFR-H9C operates at a supply voltage of 1.5V, which is standard for DDR3 SDRAM. This lower voltage compared to DDR2 (1.8V) reduces power consumption, making it suitable for energy-efficient systems. The device is designed to operate reliably within this voltage range as specified in the datasheet.

What is the package type of H5TQ4G63AFR-H9C?

The H5TQ4G63AFR-H9C is packaged in a 96-ball TFBGA (Thin Fine-Pitch Ball Grid Array) with a rectangular shape. This package is surface-mount, offering excellent thermal and electrical performance. The ball pitch is 0.8mm, which facilitates PCB routing and manufacturing. This package is commonly used for high-density memory devices.

Is H5TQ4G63AFR-H9C RoHS compliant?

Yes, the H5TQ4G63AFR-H9C is RoHS compliant and halogen-free, as indicated in the datasheet and distributor listings. This means it meets the European Union's Restriction of Hazardous Substances directive, limiting the use of certain hazardous materials. This makes it suitable for environmentally conscious designs and global markets.

What is the clock speed of H5TQ4G63AFR-H9C?

The H5TQ4G63AFR-H9C has a clock speed (tCK) of 0.255ns, which corresponds to a data rate of approximately 3.9 Gbps per pin. This high-speed operation is typical for DDR3 memory, enabling fast data transfer for demanding applications. The exact timing parameters are detailed in the datasheet.

What are the typical applications of H5TQ4G63AFR-H9C?

The H5TQ4G63AFR-H9C is used in main memory applications such as desktop and laptop computers, servers, networking equipment, and embedded systems. Its 4Gb density and 256M x 16 organization make it suitable for systems requiring high memory capacity and bandwidth. It is also used in industrial and consumer electronics where DDR3 memory is required.

What is the difference between H5TQ4G63AFR-H9C and H5TQ4G63AFR-H9I?

The H5TQ4G63AFR-H9C and H5TQ4G63AFR-H9I are both 4Gb DDR3 SDRAM from SK Hynix, but they differ in speed grade. The 'C' suffix typically indicates a higher speed grade (faster tCK) compared to the 'I' suffix. The H9C has a tCK of 0.255ns, while the H9I may have a slower tCK. Always verify the specific timing parameters in the datasheet for your application.

Can H5TQ4G63AFR-H9C be used as a drop-in replacement for other DDR3 chips?

Yes, the H5TQ4G63AFR-H9C can be a drop-in replacement for other 4Gb DDR3 SDRAM chips with the same 256M x 16 organization and 96-ball TFBGA package, provided they are pin-compatible and have similar timing parameters. Cross-reference parts include K4B4G1646E-BYK0 from Samsung and MT41K256M16LY-107:N from Micron. Always verify pinout and timing compatibility before use.

Where can I buy H5TQ4G63AFR-H9C?

H5TQ4G63AFR-H9C is available from various distributors including Win Source, Partstack, and Octopart. As of 2026-08-18, pricing starts at approximately $8.50 for single units, with volume discounts available. Check current stock and pricing on distributor websites like DigiKey, Mouser, or Octopart for the most up-to-date availability.

What is the lead time for H5TQ4G63AFR-H9C?

The lead time for H5TQ4G63AFR-H9C varies by distributor and market conditions. As of 2026-08-18, some distributors may have stock available for immediate shipment, while others may require a lead time of 4-8 weeks. It is recommended to check with multiple distributors to find the best availability and lead time for your order.

Is H5TQ4G63AFR-H9C in stock?

Stock availability for H5TQ4G63AFR-H9C fluctuates. As of 2026-08-18, some distributors like Win Source and Partstack may have stock, but it is advisable to check real-time inventory on Octopart or distributor websites. Supply and demand status is currently 'Limited' according to GlobalSpec, so it is best to place orders early.

What is the price of H5TQ4G63AFR-H9C?

As of 2026-08-18, the price of H5TQ4G63AFR-H9C is approximately $8.50 for 1 unit, $7.80 for 10 units, $7.10 for 100 units, $6.50 for 500 units, and $5.90 for 1000 units. Prices may vary by distributor and quantity. For the most accurate pricing, check current quotes on Octopart or distributor websites.

Where can I download the H5TQ4G63AFR-H9C datasheet PDF?

The H5TQ4G63AFR-H9C datasheet PDF can be downloaded from several sources, including Alldatasheet (https://www.alldatasheet.com/datasheet-pdf/pdf/533437/HYNIX/H5TQ4G63AFR-H9C.html) and Datasheets.com (https://www.datasheets.com/sk-hynix/h5tq4g63afr-h9c). The datasheet contains 35 pages of detailed specifications, including pinout, timing diagrams, and electrical characteristics.

What are the key specifications of H5TQ4G63AFR-H9C that engineers should know?

Engineers should know that the H5TQ4G63AFR-H9C is a 4Gb DDR3 SDRAM with 256M x 16 organization, operating at 1.5V with a tCK of 0.255ns. It has 8192 refresh cycles and is packaged in a 96-ball TFBGA. It is RoHS compliant and halogen-free. These specifications make it suitable for high-bandwidth main memory applications in computing and embedded systems.

What is the best Samsung equivalent for H5TQ4G63AFR-H9C?

The best Samsung equivalent for H5TQ4G63AFR-H9C is the K4B4G1646E-BYK0, which is a 4Gb DDR3 SDRAM with the same 256M x 16 organization and 96-ball FBGA package. It is pin-compatible and offers similar performance. According to cross-reference data from GlobalSpec, this is a direct alternative. Always verify timing parameters and pinout before substitution.

Engineering reference data for H5TQ4G63AFR-H9C — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5TQ4G63AFR-H9C when you need a high-speed 4Gb DDR3 SDRAM with 256M x 16 organization for main memory applications. It is ideal for systems requiring high bandwidth and low power consumption. If you need a lower-cost option with slightly slower speed, consider the H5TQ4G63AFR-H9I. For cross-brand alternatives, the Samsung K4B4G1646E-BYK0 and Micron MT41K256M16LY-107:N are pin-compatible drop-in replacements with similar specifications. Verify timing parameters and pinout before substitution. The H9C is preferred for new designs due to its higher speed grade and environmental compliance.

Comparison with Alternatives

Parameter	This Product	H5TQ4G63AFR-H9I	K4B4G1646E-BYK0	MT41K256M16LY-107:N
Package	TFBGA-96	TFBGA-96	FBGA-96	FBGA-96
Brand	SK Hynix	SK Hynix	Samsung	Micron
Density	4Gb	4Gb	4Gb	4Gb
Organization	256M x 16	256M x 16	256M x 16	256M x 16
Supply Voltage	1.5V	1.5V	1.5V	1.5V
Clock Speed (tCK)	0.255ns	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Refresh Cycles	8192	8192	8192	8192
RoHS	Compliant	Compliant	Compliant	Compliant

Key Differentiators

Higher speed grade (tCK=0.255ns) compared to H9I variant (vs H5TQ4G63AFR-H9I)
RoHS compliant and halogen-free (vs K4B4G1646E-BYK0)
Proven reliability with 8192 refresh cycles (vs MT41K256M16LY-107:N)

Design Notes

For high-speed DDR3 interfaces, maintain controlled impedance of 50 ohms for single-ended traces and 100 ohms differential for clock and strobe pairs. Keep trace lengths matched within 0.1 inches to minimize skew. Use a solid ground plane beneath the memory device and route all signals over the ground plane to reduce EMI. Place decoupling capacitors (0.1uF and 0.01uF) close to each VDD and VDDQ pin to filter high-frequency noise.

The H5TQ4G63AFR-H9C can dissipate significant heat during high-speed operation. Ensure adequate airflow or a heatsink if the device is operated at high ambient temperatures. The TFBGA package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. Use thermal vias under the package to conduct heat to the PCB ground plane. Monitor junction temperature to stay within the specified operating range.

DDR3 signals are sensitive to reflections and crosstalk. Use on-die termination (ODT) settings to match the impedance of the memory bus. Place series termination resistors (22-33 ohms) near the driver for address and control signals. Keep the signal traces short and avoid vias where possible. Use simulation tools to verify signal integrity at the target data rate. Follow the layout guidelines in the SK Hynix datasheet for optimal performance.