IAUC60N04S6L030HATMA1 vs IAUCN10S5L280DATMA1 Comparison

Detailed side-by-side comparison of IAUC60N04S6L030HATMA1 by Infineon and IAUCN10S5L280DATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUC60N04S6L030HATMA1

IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon

IAUC60N04S6L030HATMA1 βœ“ Active
Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active

Specification Comparison

Parameter IAUC60N04S6L030HATMA1 IAUCN10S5L280DATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.94 $1.62
Manufacturer Infineon Technologies Infineon Technologies
Part Series OptiMOS 6 β€”
Configuration Half-Bridge (2 N-Channel) Dual N-Channel MOSFET Array
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TJ 60 A β€”
On-Resistance R_DS(on) at VGS=10V 3.0 mOhm (typical) β€”
Total Gate Charge (Qg) at VGS=10V 35 nC β€”
Output Capacitance (Coss) 2.128 nF β€”
Reverse Transfer Capacitance (Crss) 596 pF β€”
Gate Threshold Voltage (VGS(th)) 2 V β€”
Maximum Power Dissipation (PD) at TC 75 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) PG-TDSON-8-61 (SSO8)
Mounting Type Surface Mount Surface Mount
Automotive Qualification AEC-Q101 (per part number suffix) β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1
Product Family β€” OptiMOS 5
Drain-Source Voltage (Vds) β€” 100 V
Continuous Drain Current (Id) at Tj β€” 23 A
Power Dissipation (Pd) at Tc β€” 38 W
Automotive Qualified β€” Yes (AEC-Q101, IAU prefix)
Technology β€” OptiMOS 5 Trench MOSFET
Operating Temperature Range β€” -55C to +175C (junction)
Pin Count β€” 8
Packing β€” Tape & Reel (T&R)

Datasheets & Resources

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