IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IAUCN10S5L280DATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.52 | $25.20 |
| 100 | $2.18 | $218.00 |
| 500 | $1.85 | $925.00 |
| 1,000 | $1.62 | $1,620.00 |
IAUCN10S5L280DATMA1 Overview
A dual MOSFET (or MOSFET array) is a single package containing two independent MOSFET dies with shared source connections or fully isolated, used to halve board space, simplify gate-drive routing, and improve thermal coupling in half-bridge, full-bridge, and synchronous-rectifier topologies. MOSFET arrays sit within the broader category of power MOSFETs, which in turn are a key sub-family of discrete semiconductors, and ultimately fall under power management devices. Dual N-channel parts are particularly common in low-side and synchronous-rectifier positions where both switches can be driven with the same polarity.
Key features of the IAUCN10S5L280DATMA1 include a 100V drain-source breakdown voltage (Vds), an ultra-low on-state resistance for the 100V OptiMOS 5 generation, and a logic-level compatible gate drive. The SSO8 (PG-TDSON-8-61) package offers an exposed drain pad that dramatically reduces thermal resistance, allowing the dual die to share a single cooling surface. The 38W Tc power rating reflects the package's ability to dissipate substantial heat when mounted on a sufficient copper area.
Architecturally, the OptiMOS 5 platform uses Infineon's latest trench MOSFET technology, which optimizes the figure-of-merit (FOM = Rds(on) × Qg) for switching loss reduction. The low Rds(on) per die minimizes conduction loss, while the optimized gate charge enables higher switching frequencies without excessive driver loss. The result is a part that performs well in both hard-switched and soft-switched power topologies, from 48V DC-DC converters in mild-hybrid vehicles to high-frequency synchronous buck stages in industrial automation.
Typical applications include automotive 48V motor drives, LED lighting ballasts, isolated DC-DC converter primary-side switches, and OR-ing / hot-swap controllers. The dual-die configuration is particularly useful in half-bridge and synchronous-rectifier layouts where PCB routing symmetry is critical. The automotive grade qualification (per the IAU prefix) means the part is suitable for AEC-Q101 environments including engine-control units, battery management, and electric power steering.
When designing with this part, ensure the gate drive voltage matches the OptiMOS 5 Vgs(th) and that the SSO8 exposed pad is soldered to a copper pour of at least 1 square inch for thermal performance. Pay attention to dv/dt-induced turn-on in half-bridge configurations; adding a small gate-source resistor (10-100kΩ) on the lower FET prevents spurious turn-on from the high-side dV/dt.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
Drop-in alternatives for IAUCN10S5L280DATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN10S5L280DATMA1 (same form factor and footprint) — differing in Package, Automotive Qualification, Technology, Drain-Source Voltage (VDS), MSL Level.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN10S5L110TATMA1
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View Datasheet →IAUCN10S7L290TATMA1
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View Datasheet →IAUC120N06S5L015ATMA1
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View Datasheet →IAUC60N04S6L030HATMA1
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View Datasheet →IAUZ18N10S5L420ATMA1
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$0.48 / Unit
View Datasheet →IAUCN10S5L280DATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 5 |
| Configuration | Dual N-Channel MOSFET Array |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) at Tj | 23 A |
| Power Dissipation (Pd) at Tc | 38 W |
| Package | PG-TDSON-8-61 (SSO8) |
| Mounting Type | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) |
| Technology | OptiMOS 5 Trench MOSFET |
| Operating Temperature Range | -55C to +175C (junction) |
| Pin Count | 8 |
| MSL Level | 1 |
| RoHS Status | Compliant |
| Packing | Tape & Reel (T&R) |
IAUCN10S5L280DATMA1 Pin Configuration
| Pin 1 | S1 — Source of MOSFET 1 |
| Pin 2 | G1 — Gate of MOSFET 1 |
| Pin 3 | S2 — Source of MOSFET 2 |
| Pin 4 | G2 — Gate of MOSFET 2 |
| Pin 5 | D2 — Drain of MOSFET 2 (also tied to exposed pad) |
| Pin 6 | D2 — Drain of MOSFET 2 (also tied to exposed pad) |
| Pin 7 | D1 — Drain of MOSFET 1 (also tied to exposed pad) |
| Pin 8 | D1 — Drain of MOSFET 1 (also tied to exposed pad) |
Safe Operating Area (SOA) - per die, Tc=25C
Typical Applications
IAUCN10S5L280DATMA1 is suitable for 6 applications: 48V Automotive Motor Drive, Automotive LED Lighting Ballast, 48V-to-12V DC-DC Converter, Industrial Half-Bridge / Synchronous Rectifier, Battery Management / OR-ing Controller, Hot-Swap / In-Rush Current Limiter.
48V Automotive Motor Drive
The IAUCN10S5L280DATMA1 fits 48V automotive motor-drive half-bridge stages where two 100V-rated N-channel MOSFETs are needed in a compact footprint. Its 23A continuous drain current and 38W power dissipation in the SSO8 package handle typical 48V motor loads (e.g., ePump, eTurbo, eSteering auxiliary motors), while the 100V Vds rating provides 2x safety margin above the 54V worst-case 48V bus. The AEC-Q101 automotive qualification makes it acceptable for under-hood and chassis-mounted designs.
Recommended
Automotive LED Lighting Ballast
The IAUCN10S5L280DATMA1 is suited to automotive LED headlight and daytime-running-lamp ballast circuits where dual N-channel switches form the synchronous-rectifier side of a buck converter. The 100V Vds rating covers the rectified 12V bus plus inductive transients, and the SSO8 exposed-pad package keeps the dual-die junction temperature in check at the high ambient temperatures of an enclosed headlamp housing. The IAU prefix confirms AEC-Q101 qualification for headlamp modules.
Recommended
48V-to-12V DC-DC Converter
The IAUCN10S5L280DATMA1 is well-matched to 48V-to-12V buck converter primary-side and synchronous-rectifier switches. The 100V Vds rating provides ample headroom above the 48V nominal bus including load-dump transients up to 70V, and the dual-die SSO8 configuration simplifies PCB layout by placing both FETs in a single thermal footprint. The OptiMOS 5 low Qg enables switching frequencies above 200 kHz for compact magnetics.
Recommended
Industrial Half-Bridge / Synchronous Rectifier
The IAUCN10S5L280DATMA1 serves industrial half-bridge and synchronous-rectifier stages in 48V-80V industrial bus systems, including solar inverters, telecom rectifiers, and battery management. The dual N-channel configuration reduces component count versus discrete DPAK alternatives, while the SSO8 package's exposed pad allows substantial continuous current when mounted on adequate copper. The 100V rating covers 60V-72V industrial battery and telecom rails with margin.
Recommended
Battery Management / OR-ing Controller
The IAUCN10S5L280DATMA1 fits battery-management OR-ing and load-disconnect switches in 48V battery stacks. The 100V Vds rating covers multi-cell Li-ion battery packs including transient overvoltages, and the dual-die SSO8 package provides parallel-FET configuration options for high-current paths. The low Rds(on) minimizes conduction loss in continuous-current paths, reducing thermal stress in enclosed battery compartments.
Recommended
Hot-Swap / In-Rush Current Limiter
The IAUCN10S5L280DATMA1 works as a hot-swap or in-rush current limiter in 48V distributed-power systems. The 100V Vds rating handles 48V bus transients, the dual-die configuration can be paralleled for lower effective Rds(on) at high inrush currents, and the SOA capability of the SSO8 package handles the high-energy startup pulses typical of bulk-capacitor charging. AEC-Q101 qualification supports deployment in automotive and harsh industrial environments.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN10S5L280DATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S5L110TATMA1 | IAUCN10S7L290TATMA1 | IAUC120N06S5L015ATMA1 | IAUC60N04S6L030HATMA1 | IAUZ18N10S5L420ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-61 (SSO8) | PG-TDSON-8-61 (SSO8) - same | PG-TDSON-8-61 (SSO8) - same | PG-TDSON-8-61 (SSO8) - same | PG-TDSON-8-61 (SSO8) - same | PG-TDSON-8-61 (SSO8) - same |
| Drain-Source Voltage (Vds) | 100 V | 100 V | 100 V | 60 V | 40 V | 100 V |
| On-State Resistance (Rds(on)) | 280 mΩ class | 110 mΩ class | 290 mΩ class (OptiMOS 7) | 15 mΩ class | 30 mΩ class | 420 mΩ class |
| Configuration | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel | Dual N-Channel |
| Technology Generation | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 5 | OptiMOS 6 | OptiMOS 5 |
| Automotive Qualified (AEC-Q101) | Yes | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price @ 1k | $1.62 | $2.10 | $2.40 | $2.85 | $2.65 | $1.45 |
Key Differentiators
- Automotive-qualified dual N-channel MOSFET in compact SSO8 package (vs Discrete DPAK MOSFET pairs)
- OptiMOS 5 100V technology optimized for 48V automotive systems (vs IAUC120N06S5L015ATMA1 (60V OptiMOS 5))
- 280 mΩ class Rds(on) - balanced cost-performance point (vs IAUCN10S5L110TATMA1 (110 mΩ class))
Design Notes
Estimated: at Pd=38W Tc-limited operation, the SSO8 (PG-TDSON-8-61) package with a 1 square inch copper-pour pad achieves a junction-to-ambient thermal resistance of approximately 50 C/W. This means the junction temperature rise above ambient is 38W × 50 C/W = 1900C, which exceeds the 175C Tj max - so continuous 38W operation is only feasible with a substantial heatsink or active cooling. For most designs, plan continuous dissipation at 1-2W with the dual die sharing the single thermal pad.
Solder the exposed drain pad to a copper pour of at least 1 square inch (645 mm²) for adequate thermal performance. Use multiple thermal vias (0.3mm drill, 0.6mm pad, 1.0mm pitch) under the exposed pad to conduct heat to inner PCB copper layers. Keep the high-side and low-side gate drive loops short (under 5mm total length) to minimize parasitic inductance that causes ringing and dv/dt-induced turn-on.
In half-bridge configurations, the high-side dV/dt can inject current through the low-side FET's gate-drain capacitance (Cgd, Miller capacitance) and cause spurious turn-on. Add a 10-100kΩ gate-source resistor on the low-side FET to provide a discharge path for this Miller current. Also ensure the gate driver can sink enough current to overcome the Miller plateau - for OptiMOS 5 in SSO8, a driver with 2A sink capability is recommended.
When driving the dual MOSFETs in a half-bridge at high dV/dt, place the gate-source resistors directly at the FET pins (not at the driver output) to dampen the gate loop. Use a Kelvin-source connection for the high-current source path by separating the power-source pin from the gate-driver-source-return pin. This prevents source-inductance-induced gate-voltage ringing from falsely turning the FET on or off.
Compliance Information
AEC-Q101 qualified (automotive MOSFET standard, not AEC-Q100 which is for ICs). RoHS and REACH compliant per Infineon product page. Lead-free and halogen-free per MSL-1 rating.
