IAUS260N10S5N019TATMA1 vs BSC076N04NDATMA1 Comparison
Detailed side-by-side comparison of IAUS260N10S5N019TATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUS260N10S5N019TATMA1 - 100V 260A 1.9mΞ© OptiMOS 5 MOSFET | Infineon
IAUS260N10S5N019TATMA1 β ActiveInfineon
BSC076N04NDATMA1
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
BSC076N04NDATMA1 β ActiveSpecification Comparison
| Parameter | IAUS260N10S5N019TATMA1 | BSC076N04NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $0.82 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-to-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) | 260 A (Tj) | β |
| On-State Resistance (Rds(on)) | 1.9 mΞ© (typical, 10 V Vgs) | β |
| Power Dissipation (Pd) | 300 W (Tc) | β |
| Package | PG-HDSOP-16-2 (TOLT, topside-cooled) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 16 | β |
| Operating Temperature Range | -55 C to +175 C (Tj) | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | β |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Technology | OptiMOS 5 trench-gate | Trench MOSFET (OptiMOS 3) |
| Automotive Qualified | Yes (IAUS prefix denotes automotive grade) | β |
| RoHS Status | Compliant | β |
| Series | β | OptiMOS 3 |
| Configuration | β | Dual N-Channel (independent MOSFETs) |
| Drain-Source Voltage (VDS) max | β | 40 V |
| Continuous Drain Current (ID) | β | 20 A (Tc) |
| Gate Threshold Voltage (VGS(th)) | β | 4 V (max, typical) |
| On-Resistance RDS(on) max | β | 7.6 mOhm |
| Power Dissipation (Ta) | β | 2.3 W |
| Power Dissipation (Tc) | β | 65 W |
| Qgd/Qgs Ratio | β | < 0.8 (high shot-through immunity) |
| Operating Junction Temperature | β | -55 C to +175 C |
| Package / Case | β | PG-TDSON-8-4 (SuperSO8, 5x6 mm) |
| RoHS / Pb-Free | β | Compliant (Pb-free plating) |
| FET Type | β | 2x N-Channel MOSFET array |