IAUTN04S7N003ATMA1 vs IAUCN04S7L042GATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N003ATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N003ATMA1
IAUTN04S7N003ATMA1 - 40V 350A OptiMOS 7 N-Channel MOSFET | Infineon
IAUTN04S7N003ATMA1 β ActiveInfineon
IAUCN04S7L042GATMA1
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N003ATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.42 | $0.86 |
| Technology | OptiMOS 7 N-Channel Trench MOSFET | Trench N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at Tj | 350 A | β |
| Power Dissipation (PD) at Tc=25Β°C | 357 W | β |
| RDS(on) max at VGS=10V | 0.24 mOhm (typical) | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Avalanche Single-Pulse Current | [DATA_NEEDED: IAS] | β |
| Body Diode Continuous Forward Current | 350 A (Tj = 25 Β°C) | β |
| Body Diode Pulse Current | 3510 A (tp = 100 Β΅s, Tj = 25 Β°C) | β |
| Body Diode Forward Voltage (VSD) | 0.95 V max (0.8 V typ) at IS = 100 A | β |
| Reverse Recovery Time (trr) | 83 ns typical / 125 ns max | β |
| Reverse Recovery Charge (Qrr) | 126 nC typical / 252 nC max | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (Tj) | -55C to +175C (Tj) |
| Package | PG-HSOF-8-9 (TOLL, 10x12 mm, surface mount) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 40V |
| Continuous Drain Current (ID, Tj) | β | 77 A |
| Maximum Power Dissipation (PD, Tc) | β | 50 W |
| Polarity / Channel Type | β | N-Channel enhancement mode |
| Automotive Qualified | β | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | β | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | β | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | β | [DATA_NEEDED: Qg @ VGS=10V] |