IPB110P06LMATMA1 vs IRFB7545PBF Comparison
Detailed side-by-side comparison of IPB110P06LMATMA1 by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPB110P06LMATMA1 | IRFB7545PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.31 | $0.95 |
| FET Type | P-Channel | β |
| Technology | OptiMOS (trench MOSFET) | StrongIRFETβ’ (HEXFET, N-Channel) |
| Drain-Source Voltage (VDS) | -60 V | β |
| Continuous Drain Current (ID) at TC=25C | -100 A | β |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | β |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | β |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | β |
| Gate-Source Voltage (VGS max) | +/-20 V | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | β |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | β |
| Mounting Type | Surface Mount | Through Hole (THT) |
| Supplier Device Package | PG-TO263-3-2 | β |
| Gate Drive Level | Logic-level compatible | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IRFB7545PBF |
| Polarity | β | N-Channel |
| VDS (Drain-Source Voltage) max | β | 60 V |
| VGS (Gate-Source Voltage) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | β | 95 A |
| Pulsed Drain Current (IDM) | β | 380 A |
| Single-Pulse Avalanche Current (IAS) | β | 57 A |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.0 C/W |
| Operating Junction Temperature | β | -55C to +175C |
| Package | β | TO-220AB (Through-Hole) |
| Lead-Free / RoHS | β | Yes (Lead-Free, PBF suffix) |
| MSL Level | β | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | β | 10 V |
| Avalanche Energy Rated | β | Yes |