IRFB7545PBF - 60V 95A N-Channel HEXFET MOSFET | Infineon
MPN: IRFB7545PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.95 | $950.00 |
IRFB7545PBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power electronics to switch and amplify DC/DC, DC/AC, and motor-drive circuits. The StrongIRFET™ family sits within the broader N-channel MOSFET hierarchy: MOSFET → power MOSFET → N-channel enhancement-mode → HEXFET/StrongIRFET → Infineon OptiMOS/StrongIRFET line. TO-220 remains one of the most widely used through-hole power packages because its metal tab doubles as both an electrical drain connection and a thermal path for an external heatsink.
Key specifications include R_DS(on) max of 5.9 mOhm at 10 V VGS, VDS of 60 V, continuous ID of 95 A at Tc, pulsed current capability of 380 A, and avalanche-rated single-pulse current of 57 A. The thermal resistance junction-to-case (RthJC) is 1.0 C/W, allowing effective heat extraction with a modest clip-on heatsink. Gate threshold voltage is typically 3.5 V, supporting standard 10 V logic-level drive and providing sufficient margin for gate-drive induced ringing.
The IRFB7545PBF is targeted at brushed motor drive applications, where its low R_DS(on) and high pulsed-current handling enable cooler operation and higher torque density. Additional uses include synchronous-rectifier secondary-side switches in sub-60 V DC/DC converters, high-current solenoid drivers, and OR-ing FETs in redundant 48 V telecom supplies where avalanche ruggedness is mandatory.
Designers should size the heatsink to keep Tj below 125 C under worst-case continuous load, and route the gate drive with a series resistor of 10–33 ohm to suppress ringing. The TO-220 tab is electrically connected to the drain — a clearance of at least 2 mm between the tab and any grounded heatsink is required when an insulated pad is not used.
This page synthesizes distributor stock, cross-reference alternatives, and application guidance not always visible on the manufacturer product page.
Drop-in alternatives for IRFB7545PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFB7545PBF (same form factor and footprint) — differing in Technology, Continuous Drain Current (ID) at TC=25C, Drain-Source Voltage (VDS), Package, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB7430PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRFH5015TRPBF
✅ Drop-In✓ In Stock
$0.62 / Unit
View Datasheet →HUF75545P3
✅ Drop-In📋 Reference alternative (not in catalog)
STP75NF75
✅ Drop-In📋 Reference alternative (not in catalog)
IRF1310NSTRLPBF
✅ Drop-In✓ In Stock
$0.84 / Unit
View Datasheet →IRFB7545PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRFB7545PBF |
| Technology | StrongIRFET™ (HEXFET, N-Channel) |
| Polarity | N-Channel |
| VDS (Drain-Source Voltage) max | 60 V |
| VGS (Gate-Source Voltage) max | ±20 V |
| RDS(on) max at VGS=10V | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | 95 A |
| Pulsed Drain Current (IDM) | 380 A |
| Single-Pulse Avalanche Current (IAS) | 57 A |
| Power Dissipation (PD) at Tc=25C | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W |
| Operating Junction Temperature | -55C to +175C |
| Package | TO-220AB (Through-Hole) |
| Mounting Type | Through Hole (THT) |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) |
| MSL Level | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | 10 V |
| Avalanche Energy Rated | Yes |
IRFB7545PBF Pin Configuration
| Pin 1 | Gate — Gate drive input; 10V enhancement, threshold ~3.5V |
| Pin 2 | Drain — Power drain; internally connected to the metal tab |
| Pin 3 | Source — Source return path; reference for gate drive and load |
Safe Operating Area (DC, TC = 25C)
Typical Applications
IRFB7545PBF is suitable for 7 applications: Brushed DC Motor Drive, Synchronous Rectifier in DC-DC Converters, 48 V Telecom OR-ing and Hot-Swap, Solenoid and Relay Driver, Battery Protection and Load Switch, Inverter Stage for Solar / Industrial, Automotive 12 V Load Switch.
Brushed DC Motor Drive
The IRFB7545PBF's 95 A continuous drain current, 5.9 mOhm R_DS(on), and 380 A pulsed rating make it ideal for brushed DC motor drives on 24 V and 48 V rails. Placed as the low-side switch in an H-bridge with TC4420 gate drivers, it sustains motor stall currents up to ~250 A while keeping conduction loss to roughly 15 W at 50 A. Avalanche ruggedness (57 A single-pulse) absorbs the inductive kick when the motor is suddenly commutated, eliminating the need for an external freewheel diode in many low-voltage applications.
Recommended
Synchronous Rectifier in DC-DC Converters
In 24 V-to-low-voltage synchronous buck converters, the IRFB7545PBF can serve as the low-side synchronous rectifier when the input stays under 60 V. Its 5.9 mOhm R_DS(on) and strong body-diode reverse recovery make it efficient at 30–50 A load currents, while the TO-220AB package simplifies heatsinking at 60 W dissipated. Use a TC4429 gate driver with 10 V drive and a 10 ohm gate resistor to limit ringing on the switching node.
Recommended
48 V Telecom OR-ing and Hot-Swap
The IRFB7545PBF handles 48 V telecom rail OR-ing and hot-swap functions where VDS = 60 V provides safe margin above the steady-state rail. Its 5.9 mOhm R_DS(on) keeps the forward drop to about 0.30 V at 50 A, dissipating 15 W in the TO-220AB tab. Pair it with a TI LM5050-1 OR-ing controller; the avalanche-rated die absorbs the inductive transient when a failed supply is disconnected.
Recommended
Solenoid and Relay Driver
Industrial solenoid and relay drivers benefit from the IRFB7545PBF's 95 A continuous and 380 A pulsed current ratings. As a low-side switch driven by a TC4427 gate driver, it can source the inrush current of large DC solenoids (often 5–10× holding current) without a series resistor. The avalanche energy rating clamps the flyback voltage, allowing direct connection to the solenoid coil without an external freewheel diode in many applications.
Recommended
Battery Protection and Load Switch
In 24 V/36 V Li-ion battery packs, the IRFB7545PBF acts as the high-current load disconnect switch and discharge protection FET. Its low 5.9 mOhm R_DS(on) limits pack losses during high-power discharge, while its avalanche ruggedness handles the inductive kick of motor controllers. A dedicated battery management IC drives the gate with 10 V and pulls it to -10 V during turn-off to guarantee no leakage through the body diode.
Recommended
Inverter Stage for Solar / Industrial
Small-scale 24 V solar charge controllers and industrial micro-inverters use the IRFB7545PBF as the switching element in the low-frequency inverter stage. Its TO-220AB tab simplifies direct-mount heatsinking at 100 W continuous dissipation, and the 60 V VDS provides 25% margin on a 48 V panel Voc. Pair with an IR2117PBF or IR2110SPBF driver for clean 10 V gate pulses and built-in dead-time control.
Recommended
Automotive 12 V Load Switch
Although not AEC-Q100 qualified, the IRFB7545PBF is widely used in non-safety automotive 12 V loads such as headlight drivers, cooling fans, and seat heaters where its 95 A capability is overkill but its low R_DS(on) is welcome. Mounted on the chassis with a clip-on heatsink, it replaces mechanical relays for silent, vibration-tolerant switching. Use a TVS across drain-source to clamp 24 V jump-start transients below the 60 V VDS maximum.
Recommended
Recommended Products Summary
Engineering reference data for IRFB7545PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB7430PBF | IRFB3207ZPBF | IRFH5015TRPBF | HUF75545P3 | STP75NF75 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | STMicroelectronics |
| Package | TO-220AB (THT) | TO-220AB (THT) - same | TO-220AB (THT) - same | PQFN-8 5x6 (SMD) | TO-220AB (THT) - same | TO-220AB (THT) - same |
| VDS max | 60 V | 40 V | 75 V | 100 V | 60 V | 75 V |
| Continuous ID at Tc=25C | 95 A | 195 A | 75 A | 100 A | 75 A | 75 A |
| RDS(on) max at VGS=10V | 5.9 mOhm | 2.4 mOhm | 8.5 mOhm | 1.5 mOhm | 10 mOhm | 10 mOhm |
| Avalanche Rated | Yes (57 A single pulse) | Yes | Yes | Yes | Yes | Yes |
| Lead-Free / RoHS | Yes (PBF) | Yes | Yes | Yes | Yes | Yes |
| Approx. Unit Price (1k qty, USD) | $0.95 | $1.20 | $1.80 | $0.65 | $0.80 | $0.85 |
Key Differentiators
- Higher continuous current than STP75NF75 at same VDS (vs STP75NF75)
- Lower R_DS(on) than HUF75545P3 in same TO-220AB (vs HUF75545P3)
- 60 V VDS with avalanche rating vs 40 V on IRFB7430PBF (vs IRFB7430PBF)
Design Notes
Estimated: at 50 A continuous drain current the IRFB7545PBF dissipates P = I² × R_DS(on) = 50² × 0.0059 ≈ 14.75 W. With RthJC = 1.0 C/W and RthJA around 40 C/W on a 1 sq-inch copper pad (no forced air), junction temperature rises roughly 590 C above ambient - clearly requiring an external clip-on heatsink. Keep Tj ≤ 125 C for reliable long-term operation; derate to 60–70 A continuous in most practical thermal environments.
The TO-220AB metal tab is internally bonded to the drain. If the heatsink is grounded, mount the part with a silicone-rubber insulator pad (e.g. Wakefield 577 series) and a plastic shoulder washer on the mounting screw to prevent a drain-to-ground short. Maintain at least 2 mm clearance between the drain tab and any grounded copper pour when no insulator is used.
Do not drive the gate directly from a 3.3 V or 5 V microcontroller GPIO - VGS(th) is typically 3.5 V, so noise on a 3.3 V rail can intermittently turn the part on. Always use a dedicated gate driver such as TC4420, TC4429, or IR2109SPBF with a 10 V supply and a 10–33 ohm gate resistor to limit ringing. A 10 kohm pull-down from gate to source ensures the MOSFET stays off when the driver is unpowered.
Keep the gate-drive loop physically small: place the gate driver within 5–10 mm of the gate pin, route gate and source return on adjacent PCB layers, and use a ground plane under the source pin. For switching frequencies above 50 kHz, add a ferrite bead on the gate lead to attenuate the miller-coupled ringing that can otherwise push VGS beyond its ±20 V maximum.
Compliance Information
RoHS compliant per Infineon product page (PBF suffix denotes lead-free). Not AEC-Q100 qualified - choose BTS70402EPGXUMA1 or similar Infineon Automotive Smart High-Side Switch for safety-critical automotive loads.
