IPD090N03LGATMA1 vs BSC014N06NSATMA1 Comparison
Detailed side-by-side comparison of IPD090N03LGATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPD090N03LGATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.89 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (Vdss) | 30 V | β |
| Continuous Drain Current (Id) @ Tc=25C | 40 A | β |
| Continuous Drain Current (Id) @ Tc=100C | [DATA_NEEDED: Id at 100C] | β |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed Id] | β |
| Maximum Power Dissipation (Pd) @ Tc=25C | 42 W | β |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | 9 mOhm (typical) | β |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | [DATA_NEEDED: Rds(on) at 4.5V] | β |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Operating Temperature Range | -55C to +175C (junction) | -55C to +150C |
| Package | PG-TO252-3-11 (DPAK) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (unlimited) | 1 |
| RoHS Status | Compliant | Compliant |
| Technology Family | OptiMOS 30V | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 60 V |
| Gate-Source Voltage (VGS) Max | β | +/- 20 V |
| Continuous Drain Current (ID) at Ta | β | 30 A |
| Continuous Drain Current (ID) at Tc | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) Typ @ VGS=10V | β | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | β | 1.45 mOhm |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 156 W |
| Technology | β | OptiMOS 5 (shielded-gate trench) |