IPT007N06NATMA1 vs BSC014N06NSATMA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and BSC014N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IPT007N06NATMA1 | BSC014N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS 5 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55C to +150C |
| Package | PG-HSOF-8-1 (TOLL) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 |
| Transistor Type | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) Max | — | +/- 20 V |
| Continuous Drain Current (ID) at Ta | — | 30 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Typ @ VGS=10V | — | 1.4 mOhm |
| On-Resistance RDS(on) Max @ VGS=10V | — | 1.45 mOhm |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 156 W |