IPT007N06NATMA1 vs IPD090N03LGATMA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and IPD090N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β Active
Specification Comparison
| Parameter | IPT007N06NATMA1 | IPD090N03LGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.34 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | β |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, TC=25C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Power Dissipation (PD, TC=25C) | 375 W | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | -55C to +175C (junction) |
| Package | PG-HSOF-8-1 (TOLL) | PG-TO252-3-11 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | Single |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | β | 40 A |
| Continuous Drain Current (Id) @ Tc=100C | β | [DATA_NEEDED: Id at 100C] |
| Pulsed Drain Current (Idm) | β | [DATA_NEEDED: pulsed Id] |
| Maximum Power Dissipation (Pd) @ Tc=25C | β | 42 W |
| On-State Resistance (Rds(on)) @ Vgs=10V, Id=30A | β | 9 mOhm (typical) |
| On-State Resistance (Rds(on)) @ Vgs=4.5V | β | [DATA_NEEDED: Rds(on) at 4.5V] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) typical] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | β | [DATA_NEEDED: Qrr] |
| Technology Family | β | OptiMOS 30V |