IPT030N12N3GATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of IPT030N12N3GATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT030N12N3GATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Channel Type N-Channel —
Configuration Single Dual N-Channel (independent MOSFETs)
Maximum Drain-Source Voltage (VDS) 120 V —
Maximum Gate-Source Voltage (VGS) 20 V —
Maximum Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) min/typ/max] —
Maximum On-Resistance (RDS(on)) 3 mΩ —
Continuous Drain Current (ID) at Ta 24 A (Ta) —
Pulsed Drain Current (IDM) at Tc 237 A (Tc) —
Power Dissipation (PD) at Ta 3.8 W (Ta) —
Power Dissipation (PD) at Tc 375 W (Tc) —
Technology OptiMOS 3 Trench MOSFET (OptiMOS 3)
Operating Junction Temperature -55 °C to +175 °C -55 C to +175 C
Package PG-HSOF-8-1 (TOLL) —
Mounting Type Surface Mount Surface Mount
Automotive Qualified Yes (per manufacturer datasheet) —
RoHS Status Compliant with Exemption —
Channel Mode Enhancement —
MSL Level [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Series — OptiMOS 3
Drain-Source Voltage (VDS) max — 40 V
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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