IQE008N03LM5CGATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of IQE008N03LM5CGATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IQE008N03LM5CGATMA1
IQE008N03LM5CGATMA1 - 30V 253A OptiMOS 5 N-Channel MOSFET | Infineon
IQE008N03LM5CGATMA1 β ActiveInfineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | IQE008N03LM5CGATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $1.21 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS 5 | β |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 40 V |
| Continuous Drain Current (ID) at Ta=25C | 27 A | β |
| Continuous Drain Current (ID) at Tc=25C | 253 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 0.85 mOhm (typ) @ 20 A | β |
| Gate-Source Voltage (VGS) Max | +/-16 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | β |
| Total Gate Charge (Qg) at VGS=10V | 64 nC (typ) | β |
| Input Capacitance (Ciss) at VDS=15V | 5700 pF (typ) | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss typical] | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 89 W | β |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +150 C |
| Package | PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (compliant per Infineon product page) | β |
| AEC-Q100 Automotive | [DATA_NEEDED: AEC-Q100 qualification status] | β |
| Technology | β | OptiMOS 5 (N-channel trench MOSFET) |
| Continuous Drain Current (ID, Tc=25C) | β | 161 A |
| Continuous Drain Current (ID, Ta=25C) | β | 28 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V |
| Total Gate Charge Qg typ | β | 85 nC |
| Power Dissipation PD (Tc=25C) | β | 94 W |
| MSL Level | β | 1 (unlimited) |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | Yes |