IRF1407PBF vs IRFZ44NPBF Comparison

Detailed side-by-side comparison of IRF1407PBF by Infineon and IRFZ44NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRF1407PBF IRFZ44NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.86 $0.65
FET Type N-Channel N-Channel
Technology HEXFET (stripe-planar MOSFET) HEXFET (Advanced Process)
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID) at TC=25C 130 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC=25C 330 W β€”
On-Resistance RDS(on) at VGS=10V 7.8 mOhm (typical) β€”
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS threshold typical/min/max] β€”
Gate Charge (Qg) 160 nC (typical) β€”
Maximum Junction Temperature 175 C β€”
Operating Temperature Range -55 C to +175 C β€”
Package TO-220AB (through-hole, 3 leads) TO-220AB (3-pin + tab)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Lead-free, RoHS compliant (PBF suffix) β€”
Avalanche Rating Repetitive avalanche rated β€”
Drain-to-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc=25C β€” 49 A
Continuous Drain Current (ID) at Tc=100C β€” [DATA_NEEDED: ID at Tc=100C]
Gate-to-Source Voltage (VGS) max β€” +/- 20 V
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V β€” 17.5 mOhm
Total Gate Charge (Qg) β€” 42 nC
Power Dissipation (PD) at Tc=25C β€” 94 W
Thermal Resistance Junction-to-Case (RthJC) β€” 1.0 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 62 C/W
Operating Junction Temperature β€” -55C to +175C
Avalanche Energy Rating (EAS) β€” [DATA_NEEDED: EAS rating]
RoHS Status β€” Compliant

Datasheets & Resources

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