IRF7854TRPBF vs IRF7815TRPBF Comparison
Detailed side-by-side comparison of IRF7854TRPBF by Infineon and IRF7815TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF7854TRPBF | IRF7815TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.48 | $0.36 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) at Ta=25Β°C | 10 A | β |
| Power Dissipation (PD) at Ta=25Β°C | 2.5 W | β |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΞ© | β |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | β |
| Total Gate Charge Qg | 27 nC | β |
| Package | SO-8 | SO-8 (8-SO) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR MOSFET (HEXFET) |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55C to +150C (Tj) |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | β |
| Qualification | JEDEC industrial, Normal level | β |
| Solder Process | Reflow and wave-solderable | β |
| Gate Drive Voltage (recommended) | 10 V | β |
| Drain-to-Source Voltage (Vdss) | β | 150 V |
| Continuous Drain Current (Id) at Ta=25C | β | 5.1 A |
| Rds(on) Max at Vgs=10V | β | 43 mOhm |
| Gate Threshold Voltage (Vgs(th)) Typ | β | 3.0 V |
| Total Gate Charge (Qg) Typ | β | 25 nC |
| Maximum Power Dissipation (Ta=25C) | β | 2.5 W |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant (Pb-free) |
| Lead-Free | β | Yes |
| Configuration | β | Single |
| Avalanche Rated | β | Yes |