IRFB3207ZPBF vs IRF1018EPBF Comparison

Detailed side-by-side comparison of IRFB3207ZPBF by Infineon and IRF1018EPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRFB3207ZPBF IRF1018EPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.38
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Part Number IRFB3207ZPBF β€”
Series HEXFET β€”
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) HEXFET (Power MOSFET)
Drain-Source Voltage (VDS) 75 V β€”
Continuous Drain Current (ID) at TC=25C 120 A β€”
Silicon-Limited Drain Current 170 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm β€”
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm β€”
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] β€”
Total Gate Charge Qg [DATA_NEEDED: total gate charge] β€”
Power Dissition (PD) at TC=25C 300 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package TO-220AB (3-lead through-hole) TO-220AB (through-hole, 3-lead)
Mounting Type Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) β€”
MSL Level N/A (through-hole) β€”
Avalanche Rated Yes (improved Z-variant ruggedness) β€”
FET Type β€” N-Channel
Drain-Source Voltage (Vdss) β€” 60 V
Continuous Drain Current (Id) at Tc=25C β€” 79 A
Rds(on) max at Vgs=10V β€” 8.4 mOhm
Total Gate Charge (Qg) β€” 46 nC
Gate Drive Voltage (Vgs) β€” 10 V (optimized; +/-20 V max)
Power Dissipation (Pd) at Tc=25C β€” 110 W
Operating Temperature Range β€” -55 C to +175 C (Tj)
Qualification β€” JEDEC (Industrial market)
RoHS Status β€” Compliant
Lead-Free (PBF suffix) β€” Yes
Pin Count β€” 3 (Gate, Drain, Source)

Datasheets & Resources

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