IRFR220NTRLPBF vs IRFR2405TRLPBF Comparison

Detailed side-by-side comparison of IRFR220NTRLPBF by Infineon and IRFR2405TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF βœ“ Active
Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF βœ“ Active

Specification Comparison

Parameter IRFR220NTRLPBF IRFR2405TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.22 $0.55
Polarity N-Channel β€”
Mode Enhancement β€”
V(BR)DSS (Drain-Source Breakdown Voltage) 200 V β€”
Continuous Drain Current (Id) at Tc=25C 5 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] β€”
Static Drain-Source On-Resistance (RDS(on)) 0.800 ohm (max) β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] β€”
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] β€”
Gate-to-Drain Charge (Qgd) Low (per datasheet - HEXFET design) β€”
Power Dissipation (Pd) at Tc=25C 43 W β€”
Operating Temperature Range -55C to +150C (junction) -55 C to +175 C (junction)
Package TO-252AA (DPAK), 2 Leads + Tab, SC-63 TO-252AA (DPAK), 3-pin (2 + Tab)
Mounting Type Surface Mount Surface Mount
MSL Level 1 β€”
RoHS Status Compliant (Pb-free PBF suffix) β€”
Packaging Tape & Reel (Left orientation - TRLPBF) Tape & Reel (TR)
Avalanche Rated Yes (HEXFET ruggedized design) β€”
Technology Family HEXFET, Planar, Generation 3 β€”
Transistor Type β€” N-Channel MOSFET
Technology β€” HEXFET (IR MOSFET, 7th generation)
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at Tc β€” 56 A
Pulsed Drain Current (IDM) β€” 200 A (typical, per datasheet family)
On-Resistance RDS(on) max @ VGS=10V β€” 16 mOhm
Gate Charge (Qg) typical β€” 70 nC
Power Dissipation (PD) at Tc β€” 110 W
Gate-Source Voltage (VGS) max β€” Β±20 V
Avalanche Energy Rated β€” Yes (HEXFET ruggedized design)
Lead-Free / RoHS β€” Yes, PBF suffix indicates lead-free and RoHS compliant

Datasheets & Resources

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