IRFS7530TRLPBF vs BSC009NE2LS5IATMA1 Comparison
Detailed side-by-side comparison of IRFS7530TRLPBF by Infineon and BSC009NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC009NE2LS5IATMA1
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ ActiveSpecification Comparison
| Parameter | IRFS7530TRLPBF | BSC009NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IRFS7530TRLPBF | — |
| Technology | StrongIRFET™ (N-Channel Trench MOSFET) | OptiMOS™ 5 (25V/30V family) |
| Drain-Source Voltage (VDS) Max | 60 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 195 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) Max @ VGS=10V | 2 mΩ | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: gate threshold voltage] | — |
| Gate Charge Qg Typ | [DATA_NEEDED: typical gate charge] | — |
| Total Power Dissipation (PD) at Tc=25°C | 375 W | — |
| Operating Temperature Range | -55 °C to +175 °C (Tj) | -55°C to +150°C |
| Package / Case | PG-TO263-2 (D2PAK, TO-263) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (TR) | — |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Pin Configuration | 3-Pin (Gate, Drain tab, Source) | — |
| Series | StrongIRFET™ | — |
| Manufacturer Part Number | — | BSC009NE2LS5IATMA1 |
| Transistor Type | — | N-Channel MOSFET |
| Configuration | — | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | — | 25 V |
| Gate-Source Voltage (V_GS) max | — | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | — | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | — | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | — | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | — | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | — | 2.5 W |
| Power Dissipation (P_D) @ T_C | — | 74 W |
| Total Gate Charge (Q_G) typ | — | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | — | 3200 pF |
| Package | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Terminal Finish | — | Matte Tin (e3 per JESD-609) |
| Number of Terminals | — | 8 |
| RoHS Status | — | Compliant |