BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
MPN: BSC009NE2LS5IATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.92 | $19.20 |
| 100 | $1.61 | $161.00 |
| 500 | $1.34 | $670.00 |
| 1,000 | $1.18 | $1,180.00 |
| 3,000 | $1.02 | $3,060.00 |
Drop-in alternatives for BSC009NE2LS5IATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC012NE2LS5IATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC006NE2LS5IATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
BSC009NE2LS5IATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer Part Number | BSC009NE2LS5IATMA1 |
| Manufacturer | Infineon Technologies |
| Technology | OptiMOS™ 5 (25V/30V family) |
| Transistor Type | N-Channel MOSFET |
| Configuration | Single with built-in diode |
| Drain-Source Voltage (V_DS) max | 25 V |
| Gate-Source Voltage (V_GS) max | 20 V |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) |
| Power Dissipation (P_D) @ T_A | 2.5 W |
| Power Dissipation (P_D) @ T_C | 74 W |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V |
| Input Capacitance (C_iss) typ | 3200 pF |
| Operating Temperature Range | -55°C to +150°C |
| Package | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Terminal Finish | Matte Tin (e3 per JESD-609) |
| Number of Terminals | 8 |
| RoHS Status | Compliant |
BSC009NE2LS5IATMA1 pg-tdson-8-7 (superso8 5x6 mm) Pin Configuration Guide
Complete pinout information for BSC009NE2LS5IATMA1 (pg-tdson-8-7 (superso8 5x6 mm) package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for BSC009NE2LS5IATMA1.
Refer to the datasheet for full pin configuration.
Safe Operating Area (DC)
Typical Applications
BSC009NE2LS5IATMA1 is suitable for 7 applications: 12V Synchronous Rectification, OR-ing FET for Redundant Power, Hot-Swap / e-Fuse Switch, Battery-Protection Load Switch, Motor-Drive Half-Bridge, USB-PD Sink Load Switch, Point-of-Load DC-DC Converter.
12V Synchronous Rectification
Used as the low-side FET in 12V-output buck converters where its 0.95 mΩ R_DS(on) and 23 nC Q_G minimize conduction and switching loss at 300-500 kHz. Per the Infineon datasheet, the device's low FOM (R_DS(on)×Q_G) outperforms prior OptiMOS generations, making it a strong fit for server and telecom point-of-load regulators seeking >97% efficiency.
Recommended
OR-ing FET for Redundant Power
Used as an OR-ing FET in N+1 redundant 12V server PSU and telecom shelf architectures. The BSC009NE2LS5IATMA1's 0.95 mΩ R_DS(on) yields only 1.7W dissipation at 43A load per rail, while the fast body diode enables hot-swap insertion without ringing. The PG-TDSON-8-7 footprint accepts a heatsink tab for additional thermal margin in dense backplane designs.
Recommended
Hot-Swap / e-Fuse Switch
Used as the main switching element in 12V hot-swap controllers on storage and networking backplanes. Per the Infineon datasheet, the device's 217A pulsed rating handles inrush transients from large bulk capacitors, while the 0.95 mΩ R_DS(on) keeps steady-state loss under 1W per FET at typical 30A loads, simplifying thermal management on FR-4 boards.
Recommended
Battery-Protection Load Switch
Employed as the main disconnect FET in 3-4S lithium battery packs and portable power tools. The BSC009NE2LS5IATMA1's 25V V_DS rating, 0.95 mΩ R_DS(on), and SuperSO8 5x6 footprint deliver low-loss load switching in a compact PCB area. The 1.7V V_GS(th) allows direct drive from a low-voltage battery-monitoring MCU without auxiliary charge-pump circuitry.
Recommended
Motor-Drive Half-Bridge
Configured as low-side switch in 12V/24V brushless DC motor half-bridges for power tools, fans, and small e-mobility drives. Per the Infineon datasheet, the device's 0.95 mΩ R_DS(on) minimizes I²R losses during high-torque PWM cycles at 20-50 kHz, and the rugged avalanche-rated body diode absorbs inductive kickback without external TVS clamps.
Recommended
USB-PD Sink Load Switch
Used as the main VBUS load switch in USB-PD sink applications delivering 5V/3A-5A to downstream devices. The BSC009NE2LS5IATMA1's 25V V_DS rating and 0.95 mΩ R_DS(on) accommodate 20V USB-PD negotiation profiles while keeping conduction loss under 250 mW at 5A, enabling efficient Type-C docking-station and hub designs without external heatsinking.
Recommended
Point-of-Load DC-DC Converter
Used as the synchronous FET in buck converters stepping 12V down to 1-3.3V core voltages for FPGAs, ASICs, and processors. Per the Infineon datasheet, the 0.95 mΩ R_DS(on) and 23 nC Q_G reduce total loss to under 2% at full load, supporting the high-current (>30A) transient demands of modern processors with sub-microsecond load-step response.
Recommended
Recommended Products Summary
Engineering reference data for BSC009NE2LS5IATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC012NE2LS5IATMA1 | BSC006NE2LS5IATMA1 | BSZ031NE2LS5ATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TDSON-8-7 (5x6 mm) | PG-TSDSON-8 (3x3 mm) |
| V_DS max | 25 V | 25 V | 25 V | 25 V |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | 1.2 mΩ (+26%) | 0.6 mΩ (-37%) | 3.1 mΩ (+226%) |
| Continuous I_D @ T_C=25°C | 217 A (pulsed) | ~200 A (pulsed) | ~250 A (pulsed) | ~80 A (pulsed) |
| Total Gate Charge Q_G typ | 23 nC | 20 nC | 30 nC | 9 nC |
| Technology | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) | OptiMOS 5 (25V) |
| RoHS / Lead-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Lower R_DS(on) in same package than BSC012 variant (vs BSC012NE2LS5IATMA1)
- Higher current capability in same package than BSC006 (vs BSC006NE2LS5IATMA1)
- Larger package (5x6) than BSZ031 with better thermal performance (vs BSZ031NE2LS5ATMA1)
Design Notes
Estimated: at 100A continuous conduction with V_GS=10V, power dissipation is P=I²×R = 100²×0.95mΩ ≈ 9.5W at T_J=25°C and roughly 13W at T_J=125°C (R_DS(on) rises ~40% hot). The PG-TDSON-8-7 package has θ_JC ≈ 1.5°C/W on the exposed drain pad; on a 1-square-inch 2-oz copper pour θ_JA falls to ~35°C/W. At 9.5W on a 35°C/W board, junction rise is ~330°C — clearly insufficient, so heatsinking or wider copper (≥3 sq-in 4-layer) is required for continuous 100A operation. For ≤40A typical applications, a 1 sq-in 2-oz pour is adequate.
Per the Infineon PG-TDSON-8-7 land-pattern recommendation, route the high-current drain on the top layer directly into the exposed pad — never through vias, since via resistance and inductance dominate at 100A+ peaks. Use multiple thermal vias (≥9×0.3mm) under the pad to inner copper planes. Keep the gate loop (gate-driver → gate resistor → gate pin → source pin → driver return) under 5 nH to prevent dv/dt-induced ringing that can cause MOSFET shoot-through in half-bridge configurations.
Do not assume V_GS(th)=1.7V is sufficient to fully enhance the device — at V_GS=4.5V R_DS(on) is roughly 2× the V_GS=10V figure (per Infineon datasheet characterization curves). For synchronous-rectifier bootstrap supplies, the bootstrap voltage may sag below 8V at light load, increasing conduction loss by 30-50%; use a charge pump or external 10V bias when possible. Also note that the device's avalanche rating is for unclamped inductive switching only — for H-bridge motor-drive applications, add external TVS diodes to absorb repetitive avalanche energy.
Compliance Information
RoHS compliant and lead-free per JESD-609 e3 terminal finish (matte tin) per Infineon product page. AEC-Q100 not applicable — this is a discrete MOSFET, not qualified to automotive grade; for automotive use consider Infineon's automotive-grade OptiMOS 5 variants. Halogen-free status not explicitly stated in provided data.
