IRFZ44NPBF vs IRF640NPBF Comparison
Detailed side-by-side comparison of IRFZ44NPBF by Infineon and IRF640NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFZ44NPBF | IRF640NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.25 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc=25C | 49 A | β |
| Continuous Drain Current (ID) at Tc=100C | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-to-Source Voltage (VGS) max | +/- 20 V | [DATA_NEEDED: VGS max rating] |
| Static Drain-Source On-Resistance (RDS(on)) at VGS=10V | 17.5 mOhm | β |
| Total Gate Charge (Qg) | 42 nC | 44.7 nC |
| Power Dissipation (PD) at Tc=25C | 94 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 62 C/W | β |
| Operating Junction Temperature | -55C to +175C | -55 C to +150 C |
| Package | TO-220AB (3-pin + tab) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through-Hole (TO-220 tab) |
| Technology | HEXFET (Advanced Process) | HEXFET (5th Generation) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS rating] | β |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Continuous Drain Current (ID) at Tc | β | 18 A |
| Power Dissipation (PD) at Tc | β | 150 W |
| On-Resistance RDS(on) max at VGS=10V | β | 150 mOhm |
| Avalanche Energy Rated | β | Yes |
| dv/dt Ruggedness | β | Yes (dynamic rated) |
| Configuration | β | Single N-Channel MOSFET |
| Lead Finish | β | Lead-free (PBF) |
| Pin Count | β | 3 (Gate, Drain, Source) |