IRF640NPBF - 200V N-Channel HEXFET MOSFET 18A | Infineon
MPN: IRF640NPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.4438 | $0.44 |
| 10 | $0.39 | $3.90 |
| 100 | $0.34 | $34.00 |
| 500 | $0.29 | $145.00 |
| 1,000 | $0.25 | $250.00 |
Drop-in alternatives for IRF640NPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRF640N
β Drop-Inπ Reference alternative (not in catalog)
IRF640PBF
β Drop-Inπ Reference alternative (not in catalog)
IRFZ44NPBF
β Drop-Inπ Reference alternative (not in catalog)
IRLZ44NPBF
β Drop-Inβ In Stock
$0.6779 / Unit
View Datasheet βSTP55NF06L
β Drop-Inπ Reference alternative (not in catalog)
FQP33N10L
β Drop-Inπ Reference alternative (not in catalog)
IRF640NPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) at Tc | 18 A |
| Power Dissipation (PD) at Tc | 150 W |
| On-Resistance RDS(on) max at VGS=10V | 150 mOhm |
| Total Gate Charge (Qg) | 44.7 nC |
| Technology | HEXFET (5th Generation) |
| Package | TO-220AB (through-hole) |
| Operating Junction Temperature | -55 C to +150 C |
| Avalanche Energy Rated | Yes |
| dv/dt Ruggedness | Yes (dynamic rated) |
| Mounting Type | Through-Hole (TO-220 tab) |
| Configuration | Single N-Channel MOSFET |
| RoHS Status | Compliant (PBF suffix) |
| Lead Finish | Lead-free (PBF) |
| Pin Count | 3 (Gate, Drain, Source) |
IRF640NPBF Pin Configuration
| Pin 1 | Gate β Gate control input; drive to 10 V for full enhancement |
| Pin 2 | Drain β Drain terminal; also connected to the metal mounting tab |
| Pin 3 | Source β Source terminal (return for gate drive and load) |
IRF640NPBF Safe Operating Area (DC, Tc = 25 C)
Typical Applications
IRF640NPBF is suitable for 6 applications: Switched-Mode Power Supply (SMPS) Primary Switch, Brushed DC Motor Driver (H-Bridge / Half-Bridge), Solid-State Relay (SSR) Replacement, Battery Management / Low-Voltage DC-DC Converter, Uninterruptible Power Supply (UPS) Inverter, Automotive 12 V/24 V Load Switching.
Switched-Mode Power Supply (SMPS) Primary Switch
The IRF640NPBF is a strong fit for the primary-side switch in 100-200 W offline SMPS designs, particularly 48 V telecom rectifiers and 120 VAC-input auxiliary supplies. Its 200 V VDS gives 30 V margin above rectified 120 VAC mains peaks (~170 V), while 18 A ID and 150 mOhm RDS(on) keep conduction loss under 5 W at 5 A average primary current. The 44.7 nC Qg is easily driven by UCC28C42/UC3842-class PWM controllers through a small gate-drive transformer or low-side driver, and the part's avalanche ruggedness absorbs leakage-inductance spike energy at turn-off without an external TVS clamp. Place a 10 Ohm gate resistor and 100 kOhm gate-source pull-down to prevent parasitic turn-on from drain dv/dt.
Recommended
Brushed DC Motor Driver (H-Bridge / Half-Bridge)
The IRF640NPBF handles the high-side or low-side switch position in brushed DC motor drives up to 18 A continuous - typical for 12-48 V cordless tools, automotive accessory motors, and robotics actuators. Its 150 mOhm RDS(on) at VGS = 10 V produces only 2.7 W loss at 12 V/18 A, easily sunk by a small clip-on heatsink, and the 200 V rating provides comfortable margin for 48 V bus transients. For PWM speeds below 25 kHz the switching loss is negligible, and the rugged TO-220AB tab mounts directly to a chassis or motor housing. Pair with a gate driver such as the IR2104 to source/sink the 44.7 nC gate charge quickly, and add a flyback diode across the inductive load for safe turn-off.
Recommended
Solid-State Relay (SSR) Replacement
Replacing electromechanical relays with the IRF640NPBF gives silent, arc-free, million-cycle switching for industrial control panels, HVAC contactor replacements, and battery-management pre-charge circuits. Its 18 A ID and 200 V VDS comfortably switch 12-48 VDC loads at multiples of the relay's typical 30 A inrush rating, and the HEXFET's avalanche energy rating absorbs the back-EMF of solenoids and motor windings without an external TVS. Drive the gate from 10-15 V through a 1 kOhm resistor, hold it off with a 100 kOhm gate-source resistor for fail-safe behaviour, and bolt the TO-220AB tab to a small aluminium plate that doubles as a heatsink and chassis-mount anchor.
Recommended
Battery Management / Low-Voltage DC-DC Converter
The IRF640NPBF is well-suited as the main switch in a 48 V buck or boost converter for telecom battery banks, solar charge controllers, and e-bike / e-scooter traction packs. Its 150 mOhm RDS(on) and 200 V rating allow direct switching from 48-72 V battery rails without derating, and the TO-220AB tab provides the thermal mass needed for sustained 10-15 A loads. For synchronous rectification pair two IRF640NPBF devices in a half-bridge, driven by a UCC27211 high-side/low-side gate driver. The HEXFET avalanche rating provides built-in protection if the converter's synchronous rect dead-time is mis-tuned.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In a low-frequency (<25 kHz) square-wave or modified-sine UPS inverter the IRF640NPBF handles the 12 VDC to 120 VAC inversion stage with margin to spare. Four IRF640NPBF devices in an H-bridge configuration switch up to 18 A RMS, well above the 5-10 A typical output of a 1 kVA backup UPS. The 200 V VDS handles 170 V rectified-mains peaks, and the part's ruggedness allows direct connection to the low-impedance battery bus without elaborate snubbing. Add a 5 W zener clamp or TVS across each MOSFET for inductive load protection, and bolt each device to a common aluminium L-profile heatsink.
Recommended
Automotive 12 V/24 V Load Switching
Although not AEC-Q100 qualified, the IRF640NPBF is widely used as a generic 12 V/24 V load switch in automotive aftermarket accessories - driving auxiliary lighting, horns, cooling fans, and seat heaters directly from the battery bus. The 200 V VDS provides enormous margin over the 14.4 V nominal / 36 V load-dump transient rail, and the 18 A ID handles typical accessory loads of 5-10 A with comfortable thermal headroom. Use a fuse in series with the drain for short-circuit protection, drive the gate from the battery through a 1 kOhm resistor with a 100 kOhm pull-down to GND, and mount the TO-220AB tab to the chassis for heatsinking. Note: automotive OEMs should select AEC-Q100-qualified parts instead.
Recommended
Recommended Products Summary
Engineering reference data for IRF640NPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF640N | IRF640PBF | IRFZ44NPBF | IRLZ44NPBF | STP55NF06L | FQP33N10L |
|---|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Drain-to-Source Voltage (VDS) | 200 V | 200 V | 200 V | 55 V | 55 V | 55 V | 100 V |
| Continuous Drain Current (ID) | 18 A | 18 A | 18 A | 49 A | 47 A | 50 A | 33 A |
| On-Resistance RDS(on) max | 150 mOhm | 150 mOhm | 150 mOhm | 17.5 mOhm | 22 mOhm | 20 mOhm | 50 mOhm |
| Gate Threshold VGS(th) | 2-4 V (standard) | 2-4 V (standard) | 2-4 V (standard) | 2-4 V (standard) | 1-2 V (logic-level) | 1-2.5 V (logic-level) | 1-2 V (logic-level) |
| Total Gate Charge (Qg) | 44.7 nC | 44.7 nC | 44.7 nC | 63 nC | 48 nC | 60 nC | 45 nC |
| RoHS Compliance | Yes (PBF suffix) | No (non-PBF lead) | Yes (PBF suffix) | Yes | Yes | Yes | Yes |
Key Differentiators
- Same-package drop-in replacement retains TO-220AB footprint (vs IRF640N (non-PBF))
- 200 V rating vs 55-100 V logic-level alternatives (vs IRLZ44NPBF (55 V logic-level))
- Cross-brand drop-in alternative available (vs STP55NF06L (STMicroelectronics))
Design Notes
At ID = 10 A continuous with VGS = 10 V, the IRF640NPBF dissipates roughly 15 W (Estimated: P = I^2 * R = 10^2 * 0.15 = 15 W). The TO-220AB has a junction-to-ambient thermal resistance of around 62 C/W without heatsink, producing a 930 C temperature rise above ambient - far beyond the 150 C Tj maximum. A 5 C/W clip-on heatsink reduces junction rise to 75 C above a 25 C ambient, fitting comfortably under Tj max with 50 C margin. Always mount the tab with thermal compound and an insulating mica or silicone pad if the heatsink is grounded, because the tab is internally bonded to the drain.
The TO-220AB is a through-hole part with three leads on a 2.54 mm pitch; PCB land pattern should reserve 3 mm of clearance around the tab hole for an M3 screw and a generous copper pour (>=1 oz, >=100 mm^2 per lead) to spread heat into the inner PCB layers. Use a TO-220 silicone-insulator pad and a shoulder washer if mounting to a grounded heatsink to avoid shorting the drain to chassis. For high-current designs add a 1 nF ceramic bypass capacitor between drain and source on the PCB, as close to the package as possible, to suppress drain-voltage ringing.
Do not drive the IRF640NPBF gate from 3.3 V or 5 V logic - the standard-level VGS(th) of 2-4 V means the device is only partially on at 5 V, and RDS(on) can be 2-5x the datasheet value, causing excessive heat and possible thermal runaway. Always use a 10 V gate driver (such as the IR2104 for half-bridge, or a dedicated gate-drive transformer for offline SMPS). Also avoid exceeding VDS = 200 V at any point including avalanche ringing - if inductive kickback pushes VDS past 200 V add a TVS clamp across drain-source or a snubber network.
Compliance Information
RoHS compliance indicated by 'PBF' suffix in MPN; lead-free plating confirmed per Infineon datasheet. Not AEC-Q100 qualified - automotive OEM applications require AEC-Q100 alternatives. Halogen-free status not explicitly stated in available data.
