IRLZ44NPBF vs IRF640NPBF Comparison
Detailed side-by-side comparison of IRLZ44NPBF by Infineon and IRF640NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ44NPBF | IRF640NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.25 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at TC=25Β°C | 47 A | β |
| Pulsed Drain Current (IDM) | 160 A | β |
| Gate-to-Source Voltage (VGS) Max | Β±16 V | β |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | β |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΞ© max at VGS=5V, ID=25A | β |
| Total Gate Charge (Qg) | 32 nC | 44.7 nC |
| Power Dissipation (PD) at TC=25Β°C | 110 W | β |
| Power Dissipation (PD) at TA=25Β°C | 3.8 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +150 C |
| Thermal Resistance Junction-to-Case (RΞΈJC) | 1.4 Β°C/W | β |
| Package | TO-220AB (through-hole, 3 leads) | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through-Hole (TO-220 tab) |
| Technology | HEXFET (advanced process) | HEXFET (5th Generation) |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | β |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Continuous Drain Current (ID) at Tc | β | 18 A |
| Power Dissipation (PD) at Tc | β | 150 W |
| On-Resistance RDS(on) max at VGS=10V | β | 150 mOhm |
| Gate-to-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Avalanche Energy Rated | β | Yes |
| dv/dt Ruggedness | β | Yes (dynamic rated) |
| Configuration | β | Single N-Channel MOSFET |
| Lead Finish | β | Lead-free (PBF) |
| Pin Count | β | 3 (Gate, Drain, Source) |