IS43TR16256A-15HBL-TR vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of IS43TR16256A-15HBL-TR by ISSI, Integrated Silicon Solution Inc and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256A-15HBL-TR - 4Gb DDR3 SDRAM 667MHz | ISSI
IS43TR16256A-15HBL-TR β Active
Specification Comparison
| Parameter | IS43TR16256A-15HBL-TR | K4B4G1646E-BYMA |
|---|---|---|
| Brand | ISSI, Integrated Silicon Solution Inc | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $10.34 | $14.32 |
| Memory Type | DDR3 SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | β |
| Organization | 256M x 16 | 256M x 16 |
| Clock Frequency | 667 MHz | 933 MHz |
| Data Rate | 1333 Mbps | 1866 Mbps/pin |
| CAS Latency | 20 ns | [DATA_NEEDED: CAS Latency] |
| Supply Voltage | 1.5 V | 1.35 V (1.28 V to 1.575 V) |
| Package | 96-TWBGA (9x13 mm) | FBGA-96 |
| Number of Pins | 96 | 96 |
| Interface | Parallel | β |
| Burst Length | 8 and 4 (with burst chop) | [DATA_NEEDED: Burst Length] |
| Number of Banks | 8 | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| RoHS Status | Compliant | β |
| Mounting Type | Surface Mount | Surface Mount |
| Density | β | 4 Gb |
| Operating Temperature | β | 0Β°C to +95Β°C |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| RoHS | β | Compliant |